Please use this identifier to cite or link to this item:
http://elar.urfu.ru/handle/10995/111590
Title: | Electronic Properties of Single-walled V2O5 Nanotubes |
Authors: | Ivanovskaya, V. V. Enyashin, A. N. Sofronov, A. A. Makurin, Yu. N. Medvedeva, N. I. Ivanovskii, A. L. |
Issue Date: | 2003 |
Publisher: | Elsevier BV |
Citation: | Electronic Properties of Single-walled V2O5 Nanotubes / V. V. Ivanovskaya, A. N. Enyashin, A. A. Sofronov et al. // Solid State Communications. — 2003. — Vol. 126. — Iss. 9. — P. 489-493. |
Abstract: | Atomistic models of quasi-one-dimensional vanadium pentoxide nanostructures - single-walled nanotubes formed by rolling (010) layers of V2O5 are constructed and their electronic properties and bond indices are studied using the tight-binding band method. We show that all zigzag (n,0)- and armchair (n,n)-like nanotubes are uniformly semiconducting, and the band gap trends to vanish as the tube diameters decrease. The V-O covalent bonds were found to be the strongest interactions in V2O5 tubes, whereas V-V bonds proved to be much weaker. © 2003 Elsevier Science Ltd. All rights reserved. |
Keywords: | A. VANADIUM PENTOXIDE NANOTUBES D. ELECTRONIC BAND STRUCTURE BAND STRUCTURE BINDING ENERGY CHEMICAL BONDS ELECTRONIC PROPERTIES VANADIUM COMPOUNDS SINGLE-WALLED NANOTUBES (SWNT) CARBON NANOTUBES |
URI: | http://elar.urfu.ru/handle/10995/111590 |
Access: | info:eu-repo/semantics/openAccess |
SCOPUS ID: | 0038219756 |
WOS ID: | 000182953300002 |
PURE ID: | 44119654 |
ISSN: | 0038-1098 |
Appears in Collections: | Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC |
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