Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/111590
Title: Electronic Properties of Single-walled V2O5 Nanotubes
Authors: Ivanovskaya, V. V.
Enyashin, A. N.
Sofronov, A. A.
Makurin, Yu. N.
Medvedeva, N. I.
Ivanovskii, A. L.
Issue Date: 2003
Publisher: Elsevier BV
Citation: Electronic Properties of Single-walled V2O5 Nanotubes / V. V. Ivanovskaya, A. N. Enyashin, A. A. Sofronov et al. // Solid State Communications. — 2003. — Vol. 126. — Iss. 9. — P. 489-493.
Abstract: Atomistic models of quasi-one-dimensional vanadium pentoxide nanostructures - single-walled nanotubes formed by rolling (010) layers of V2O5 are constructed and their electronic properties and bond indices are studied using the tight-binding band method. We show that all zigzag (n,0)- and armchair (n,n)-like nanotubes are uniformly semiconducting, and the band gap trends to vanish as the tube diameters decrease. The V-O covalent bonds were found to be the strongest interactions in V2O5 tubes, whereas V-V bonds proved to be much weaker. © 2003 Elsevier Science Ltd. All rights reserved.
Keywords: A. VANADIUM PENTOXIDE NANOTUBES
D. ELECTRONIC BAND STRUCTURE
BAND STRUCTURE
BINDING ENERGY
CHEMICAL BONDS
ELECTRONIC PROPERTIES
VANADIUM COMPOUNDS
SINGLE-WALLED NANOTUBES (SWNT)
CARBON NANOTUBES
URI: http://hdl.handle.net/10995/111590
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 0038219756
ISSN: 0038-1098
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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