Hole-hole Interaction in a Strained InxGa1-xAs Two-dimensional System

Minkov, G. M.; Sherstobitov, A. A.; Germanenko, A. V.; Rut, O. E.; Larionova, V. A.; Zvonkov, B. N.

Please use this identifier to cite or link to this item: http://elar.urfu.ru/handle/10995/111491

Title:	Hole-hole Interaction in a Strained InxGa1-xAs Two-dimensional System
Authors:	Minkov, G. M. Sherstobitov, A. A. Germanenko, A. V. Rut, O. E. Larionova, V. A. Zvonkov, B. N.
Issue Date:	2005
Publisher:	American Physical Society (APS)
Citation:	Hole-hole Interaction in a Strained InxGa1-xAs Two-dimensional System / G. M. Minkov, A. A. Sherstobitov, A. V. Germanenko et al. // Physical Review B - Condensed Matter and Materials Physics. — 2005. — Vol. 72. — Iss. 16. — 165325.
Abstract:	The interaction correction to the conductivity of 2D hole gas in strained GaAs InxGa1-xAs GaAs quantum well structures was studied. It is shown that the Zeeman splitting, spin relaxation, and ballistic contribution should be taken into account for reliable determination of the Fermi-liquid constant F0σ. The proper consideration of these effects allows us to describe both the temperature and magnetic field dependences of the conductivity and to find the value of F0σ. © 2005 The American Physical Society.
URI:	http://elar.urfu.ru/handle/10995/111491
Access:	info:eu-repo/semantics/openAccess
SCOPUS ID:	29644442258
WOS ID:	000232934900074
PURE ID:	8532314
ISSN:	1098-0121
Sponsorship:	We thank Igor Gornyi for useful discussion. This work was supported in part by the RFBR (Grant Nos. 03-02-16150, 04-02-16626, and 05-02-16413), the CRDF (Grant Nos. EK-005-X1 and Y1-P-05-11), the INTAS (Grant No. 1B290), and the Russian Program Physics of Solid State Nanostructures.
Appears in Collections:	Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

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