Interference-induced Metalliclike Behavior of a Two-dimensional Hole Gas in an Asymmetric GaAs Inx Ga1-x As GaAs Quantum Well

Abstract

The temperature and magnetic-field dependences of the conductivity of the heterostructures with asymmetric Inx Ga1-x As quantum well are studied. It is shown that the metalliclike temperature dependence of the conductivity observed in the structures investigated is quantitatively understandable within the whole temperature range, T=0.4-20 K. It is caused by the interference quantum correction at fast spin relaxation for 0.4 K<T<1.5 K. At higher temperatures, 1.5 K<T<4 K, it is due to the interaction quantum correction. Finally, at T>4-6 K, the metalliclike behavior is determined by the phonon scattering. © 2007 The American Physical Society.