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Please use this identifier to cite or link to this item: http://elar.urfu.ru/handle/10995/111484
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dc.contributor.authorMinkov, G. M.en
dc.contributor.authorGermanenko, A. V.en
dc.contributor.authorRut, O. E.en
dc.contributor.authorSherstobitov, A. A.en
dc.contributor.authorZvonkov, B. N.en
dc.date.accessioned2022-05-12T08:18:18Z-
dc.date.available2022-05-12T08:18:18Z-
dc.date.issued2007-
dc.identifier.citationInterference-induced Metalliclike Behavior of a Two-dimensional Hole Gas in an Asymmetric GaAs Inx Ga1-x As GaAs Quantum Well / G. M. Minkov, A. V. Germanenko, O. E. Rut et al. // Physical Review B - Condensed Matter and Materials Physics. — 2007. — Vol. 75. — Iss. 19. — 193311.en
dc.identifier.issn1098-0121-
dc.identifier.otherAll Open Access, Green3
dc.identifier.urihttp://elar.urfu.ru/handle/10995/111484-
dc.description.abstractThe temperature and magnetic-field dependences of the conductivity of the heterostructures with asymmetric Inx Ga1-x As quantum well are studied. It is shown that the metalliclike temperature dependence of the conductivity observed in the structures investigated is quantitatively understandable within the whole temperature range, T=0.4-20 K. It is caused by the interference quantum correction at fast spin relaxation for 0.4 K<T<1.5 K. At higher temperatures, 1.5 K<T<4 K, it is due to the interaction quantum correction. Finally, at T>4-6 K, the metalliclike behavior is determined by the phonon scattering. © 2007 The American Physical Society.en
dc.description.sponsorshipWe are grateful to I. V. Gornyi for very useful discussions. This work was supported in part by the RFBR (Grant Nos. 05-02-16413, 06-02-16292, and 07-02-00528).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourcePhys. Rev. B Condens. Matter Mater. Phys.2
dc.sourcePhysical Review B - Condensed Matter and Materials Physicsen
dc.titleInterference-induced Metalliclike Behavior of a Two-dimensional Hole Gas in an Asymmetric GaAs Inx Ga1-x As GaAs Quantum Wellen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/submittedVersionen
dc.identifier.scopus34347335715-
local.contributor.employeeMinkov, G.M., Institute of Metal Physics, RAS, 620219 Ekaterinburg, Russian Federation; Germanenko, A.V., Institute of Physics and Applied Mathematics, Ural State University, 620083 Ekaterinburg, Russian Federation; Rut, O.E., Institute of Physics and Applied Mathematics, Ural State University, 620083 Ekaterinburg, Russian Federation; Sherstobitov, A.A., Institute of Metal Physics, RAS, 620219 Ekaterinburg, Russian Federation; Zvonkov, B.N., Physical-Technical Research Institute, University of Nizhni Novgorod, 603600 Nizhni Novgorod, Russian Federationen
local.issue19-
local.volume75-
dc.identifier.wos000246890800019-
local.contributor.departmentInstitute of Metal Physics, RAS, 620219 Ekaterinburg, Russian Federation; Institute of Physics and Applied Mathematics, Ural State University, 620083 Ekaterinburg, Russian Federation; Physical-Technical Research Institute, University of Nizhni Novgorod, 603600 Nizhni Novgorod, Russian Federationen
local.identifier.pure8531760-
local.description.order193311-
local.identifier.eid2-s2.0-34347335715-
local.fund.rffi05-02-16413-
local.fund.rffi06-02-16292-
local.fund.rffi07-02-00528-
local.identifier.wosWOS:000246890800019-
Appears in Collections:Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

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