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dc.contributor.authorMinkov, G. M.en
dc.contributor.authorGermanenko, A. V.en
dc.contributor.authorRut, O. E.en
dc.contributor.authorSherstobitov, A. A.en
dc.contributor.authorZvonkov, B. N.en
dc.date.accessioned2022-05-12T08:18:16Z-
dc.date.available2022-05-12T08:18:16Z-
dc.date.issued2007-
dc.identifier.citationRenormalization of Hole-hole Interaction at Decreasing Drude Conductivity: Gated GaAs/ Inx Ga1-x As GaAs Heterostructures / G. M. Minkov, A. V. Germanenko, O. E. Rut et al. // Physical Review B - Condensed Matter and Materials Physics. — 2007. — Vol. 76. — Iss. 16. — 165314.en
dc.identifier.issn1098-0121-
dc.identifier.otherAll Open Access, Green3
dc.identifier.urihttp://elar.urfu.ru/handle/10995/111480-
dc.description.abstractThe diffusion contribution of the hole-hole interaction to the conductivity is analyzed in gated GaAs/ Inx Ga1-x As GaAs heterostructures. We show that the change of the interaction correction to the conductivity with the decreasing Drude conductivity results both from the compensation of the singlet and triplet channels and from the arising prefactor αi <1 in the conventional expression for the interaction correction. © 2007 The American Physical Society.en
dc.description.sponsorshipWe would like to thank I. V. Gornyi for very useful discussions and I. S. Burmistrov for a critical reading of the manuscript and valuable comments. This work was supported in part by the RFBR (Grants No. 05-02-16413, No. 06-02-16292, and No. 07-02-00528), and the CRDF (Grant No. Y3-P-05-16).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourcePhys. Rev. B Condens. Matter Mater. Phys.2
dc.sourcePhysical Review B - Condensed Matter and Materials Physicsen
dc.titleRenormalization of Hole-hole Interaction at Decreasing Drude Conductivity: Gated GaAs/ Inx Ga1-x As GaAs Heterostructuresen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/submittedVersionen
dc.identifier.scopus35648981582-
local.contributor.employeeMinkov, G.M., Institute of Metal Physics RAS, 620219 Ekaterinburg, Russian Federation; Germanenko, A.V., Institute of Physics and Applied Mathematics, Ural State University, 620083 Ekaterinburg, Russian Federation; Rut, O.E., Institute of Physics and Applied Mathematics, Ural State University, 620083 Ekaterinburg, Russian Federation; Sherstobitov, A.A., Institute of Metal Physics RAS, 620219 Ekaterinburg, Russian Federation; Zvonkov, B.N., Physical-Technical Research Institute, University of Nizhni Novgorod, 603600 Nizhni Novgorod, Russian Federationen
local.issue16-
local.volume76-
dc.identifier.wos000250620600077-
local.contributor.departmentInstitute of Metal Physics RAS, 620219 Ekaterinburg, Russian Federation; Institute of Physics and Applied Mathematics, Ural State University, 620083 Ekaterinburg, Russian Federation; Physical-Technical Research Institute, University of Nizhni Novgorod, 603600 Nizhni Novgorod, Russian Federationen
local.identifier.pure8531438-
local.description.order165314-
local.identifier.eid2-s2.0-35648981582-
local.fund.rffi05-02-16413-
local.fund.rffi06-02-16292-
local.fund.rffi07-02-00528-
local.identifier.wosWOS:000250620600077-
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