Please use this identifier to cite or link to this item:
|Title:||Interaction Correction to Conductivity of AlxGa 1-xAs/GaAs Double Quantum Well Heterostructures Near the Balance|
|Authors:||Minkov, G. M.|
Germanenko, A. V.
Rut, O. E.
Sherstobitov, A. A.
Bakarov, A. K.
Dmitriev, D. V.
|Publisher:||American Physical Society (APS)|
|Citation:||Interaction Correction to Conductivity of AlxGa 1-xAs/GaAs Double Quantum Well Heterostructures Near the Balance / G. M. Minkov, A. V. Germanenko, O. E. Rut et al. // Physical Review B - Condensed Matter and Materials Physics. — 2011. — Vol. 84. — Iss. 7. — 075337.|
|Abstract:||The electron-electron interaction quantum correction to the conductivity of the gated double well AlxGa1-xAs/GaAs structures is investigated experimentally. The analysis of the temperature and magnetic field dependences of the conductivity tensor allows us to obtain reliably the diffusion part of the interaction correction for the regimes when the structure is balanced (i.e., for equal electron concentrations in the wells) and when only one quantum well is occupied. The surprising result is that the interaction correction does not reveal resonant behavior: it is practically the same for both regimes. © 2011 American Physical Society.|
|metadata.dc.description.sponsorship:||We would like to thank I. S. Burmistrov and I. V. Gornyi for illuminating discussions. This work has been supported in part by the RFBR (Grant Nos. 09-02-12206, 09-02-00789, 10-02-91336, and 10-02-00481).|
|Appears in Collections:||Научные публикации, проиндексированные в SCOPUS и WoS CC|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.