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dc.contributor.authorMinkov, G. M.en
dc.contributor.authorGermanenko, A. V.en
dc.contributor.authorRut, O. E.en
dc.contributor.authorSherstobitov, A. A.en
dc.contributor.authorBakarov, A. K.en
dc.contributor.authorDmitriev, D. V.en
dc.date.accessioned2022-05-12T08:18:03Z-
dc.date.available2022-05-12T08:18:03Z-
dc.date.issued2011-
dc.identifier.citationInteraction Correction to Conductivity of AlxGa 1-xAs/GaAs Double Quantum Well Heterostructures Near the Balance / G. M. Minkov, A. V. Germanenko, O. E. Rut et al. // Physical Review B - Condensed Matter and Materials Physics. — 2011. — Vol. 84. — Iss. 7. — 075337.en
dc.identifier.issn1098-0121-
dc.identifier.otherAll Open Access, Green3
dc.identifier.urihttp://elar.urfu.ru/handle/10995/111448-
dc.description.abstractThe electron-electron interaction quantum correction to the conductivity of the gated double well AlxGa1-xAs/GaAs structures is investigated experimentally. The analysis of the temperature and magnetic field dependences of the conductivity tensor allows us to obtain reliably the diffusion part of the interaction correction for the regimes when the structure is balanced (i.e., for equal electron concentrations in the wells) and when only one quantum well is occupied. The surprising result is that the interaction correction does not reveal resonant behavior: it is practically the same for both regimes. © 2011 American Physical Society.en
dc.description.sponsorshipWe would like to thank I. S. Burmistrov and I. V. Gornyi for illuminating discussions. This work has been supported in part by the RFBR (Grant Nos. 09-02-12206, 09-02-00789, 10-02-91336, and 10-02-00481).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourcePhys. Rev. B Condens. Matter Mater. Phys.2
dc.sourcePhysical Review B - Condensed Matter and Materials Physicsen
dc.titleInteraction Correction to Conductivity of AlxGa 1-xAs/GaAs Double Quantum Well Heterostructures Near the Balanceen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/submittedVersionen
dc.identifier.scopus80052439848-
local.contributor.employeeMinkov, G.M., Institute of Metal Physics RAS, 620990 Ekaterinburg, Russian Federation, Ural State University, 620000 Ekaterinburg, Russian Federation; Germanenko, A.V., Ural State University, 620000 Ekaterinburg, Russian Federation; Rut, O.E., Ural State University, 620000 Ekaterinburg, Russian Federation; Sherstobitov, A.A., Institute of Metal Physics RAS, 620990 Ekaterinburg, Russian Federation, Ural State University, 620000 Ekaterinburg, Russian Federation; Bakarov, A.K., Institute of Semiconductor Physics RAS, 630090 Novosibirsk, Russian Federation; Dmitriev, D.V., Institute of Semiconductor Physics RAS, 630090 Novosibirsk, Russian Federationen
local.issue7-
local.volume84-
local.contributor.departmentInstitute of Metal Physics RAS, 620990 Ekaterinburg, Russian Federation; Ural State University, 620000 Ekaterinburg, Russian Federation; Institute of Semiconductor Physics RAS, 630090 Novosibirsk, Russian Federationen
local.identifier.pure8526420-
local.description.order075337-
local.identifier.eid2-s2.0-80052439848-
local.fund.rffi09-02-12206-
local.fund.rffi09-02-00789-
local.fund.rffi10-02-91336-
local.fund.rffi10-02-00481-
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