Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/111396
Title: Quantum Conductors Formation and Resistive Switching Memory Effects in Zirconia Nanotubes
Authors: Vokhmintsev, A.
Petrenyov, I.
Kamalov, R.
Weinstein, I.
Issue Date: 2022
Publisher: IOP Publishing Ltd
IOP Publishing
Citation: Quantum Conductors Formation and Resistive Switching Memory Effects in Zirconia Nanotubes / A. Vokhmintsev, I. Petrenyov, R. Kamalov et al. // Nanotechnology. — 2022. — Vol. 33. — Iss. 7. — 075208.
Abstract: The prospects of the development of non-volatile memory elements that involve memristive metal-dielectric-metal sandwich structures are due to the possibility of reliably implementing sustained functional states with quantized conductance. In the present paper, we have explored the properties of Zr/ZrO2/Au memristors fabricated based on an anodic zirconia layer that consists of an ordered array of vertically oriented non-stoichiometric nanotubes with an outer diameter of 30 nm. The operational stability of the designed memory devices has been analyzed in unipolar and bipolar resistive switching modes. The resistance ratio ≥105 between high-resistance (HRS) and low-resistance (LRS) states has been evaluated. It has been found that the LRS conductivity is quantized over a wide range with a fundamental minimum of 0.5G 0 = 38.74 μS due to the formation of quantum conductors based on oxygen vacancies (VO). For Zr/ZrO2/Au memristors, resistive switching mechanisms to be sensitive to the migration of VO in an applied electric field have been proposed. It has been shown that the ohmic type and space-charge-limited conductivities are realized in the LRS and HRS, respectively. Besides, we have offered a brief review of parameters for functional metal/zirconia/metal nanolayered structures to create effective memristors with multiple resistive states and a high resistance ratio. © 2021 IOP Publishing Ltd.
Keywords: MEMRISTOR
OXYGEN VACANCIES
QUANTUM CONDUCTIVE FILAMENTS
RESISTANCE STATE
ZRO2
DIGITAL STORAGE
ELECTRIC FIELDS
GOLD COMPOUNDS
MEMRISTORS
NANOTUBES
QUANTUM THEORY
ZIRCONIA
CONDUCTIVE FILAMENTS
HIGH RESISTANCE
LOW RESISTANCE
MEMORY EFFECTS
MEMRISTOR
QUANTUM CONDUCTIVE FILAMENT
RESISTANCE RATIO
RESISTANCE STATE
RESISTIVE SWITCHING MEMORY
ZIRCONIA NANOTUBES
OXYGEN VACANCIES
URI: http://hdl.handle.net/10995/111396
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85121784261
PURE ID: 29073197
ISSN: 0957-4484
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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