Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/111250
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dc.contributor.authorMcLeod, J. A.en
dc.contributor.authorLukoyanov, A. V.en
dc.contributor.authorKurmaev, E. Z.en
dc.contributor.authorFinkelstein, L. D.en
dc.contributor.authorMoewes, A.en
dc.date.accessioned2022-05-12T08:15:23Z-
dc.date.available2022-05-12T08:15:23Z-
dc.date.issued2011-
dc.identifier.citationNature of the Electronic States Involved in the Chemical Bonding and Superconductivity at High Pressure in SnO / J. A. McLeod, A. V. Lukoyanov, E. Z. Kurmaev et al. — DOI 10.3390/su132212885 // JETP Letters. — 2011. — Vol. 94. — Iss. 2. — P. 142-146.en
dc.identifier.issn0021-3640-
dc.identifier.otherAll Open Access, Green3
dc.identifier.urihttp://hdl.handle.net/10995/111250-
dc.description.abstractWe have investigated the electronic structure and the Fermi surface of SnO using density functional theory calculations within recently proposed exchange-correlation potential (PBE + mBJ) at ambient conditions and high pressures up to 19.3 GPa where superconductivity was observed. It was found that the Sn valence states (5s, 5p, and 5d are strongly hybridized with the O 2p states, and that our density functional theory calculations are in good agreement with O K-edge X-ray spectroscopy measurements for both occupied and empty states. It was demonstrated that the metallic states appearing under pressure in the semiconducting gap stem due to the transformation of the weakly hybridized O 2p-Sn 5sp subband corresponding to the lowest valence state of Sn in SnO. We discuss the nature of the electronic states involved in chemical bonding and formation of the hole and electron pockets with nesting as a possible way to superconductivity. © 2011 Pleiades Publishing, Ltd.en
dc.description.sponsorshipWe acknowledge the support of the Russian Foundation for Basic Research (project nos. 11-02-00022, 10-02-00046, and 10-02-00546), the Natural Sciences and Engineering Research Council of Canada (NSERC), the Canada Research Chair program, the Council of the President of the Russian Federation for Support of Young Scientists and Leading Scientific Schools (project no. MK 3376.2011.2), the Russian Federal Agency of Science and Innovation (project no. 02.740.11.0217), partial support of the Ministry of Education of Science of the Russian Federation (project no. 2.1.1/779, program “Development of Sci entific Potential of Universities”), and the Russian Federal Agency of Science and Innovation (project no. 02.740.11.0217).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherPleiades Publishing Ltden
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceJETP Lett.2
dc.sourceJETP Lettersen
dc.titleNature of the Electronic States Involved in the Chemical Bonding and Superconductivity at High Pressure in SnOen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/submittedVersionen
dc.identifier.doi10.3390/su132212885-
dc.identifier.scopus80052872067-
local.contributor.employeeMcLeod, J.A., Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon, SK S7N 5E2, Canada; Lukoyanov, A.V., Institute of Metal Physics, Russian Academy of Sciences, Ural Division, Yekaterinburg 620990, Russian Federation, Ural Federal University, Yekaterinburg 620002, Russian Federation; Kurmaev, E.Z., Institute of Metal Physics, Russian Academy of Sciences, Ural Division, Yekaterinburg 620990, Russian Federation; Finkelstein, L.D., Institute of Metal Physics, Russian Academy of Sciences, Ural Division, Yekaterinburg 620990, Russian Federation; Moewes, A., Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon, SK S7N 5E2, Canadaen
local.description.firstpage142-
local.description.lastpage146-
local.issue2-
local.volume94-
local.contributor.departmentDepartment of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon, SK S7N 5E2, Canada; Institute of Metal Physics, Russian Academy of Sciences, Ural Division, Yekaterinburg 620990, Russian Federation; Ural Federal University, Yekaterinburg 620002, Russian Federationen
local.identifier.eid2-s2.0-80052872067-
local.fund.rffi11- 02-00022
local.fund.rffi10- 02-00046
local.fund.rffi10-02-00546
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