Влияние аморфного углерода на структуру и электрические свойства тонких пленок (ZnO/С)81

Abstract

(ZnO/C)81 thin films was prepared by ion beam sputtering. Analysis of the structure for resulting thin films showed that the ZnO layers are in the nanocrystalline state, and the carbon layers are in amorphous state. By adding amorphous carbon, the process of recrystallization in (ZnO/C)81 thin films was reduced in comparison with ZnO films (grain size increase).