Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/102741
Title: Defect concentration in nitrogen-doped graphene grown on Cu substrate: A thickness effect
Authors: Sharma, D. K.
Fateixa, S.
Hortigüela, M. J.
Vidyasagar, R.
Otero-Irurueta, G.
Nogueira, H. I. S.
Singh, M. K.
Kholkin, A.
Issue Date: 2017
Publisher: Elsevier B.V.
Citation: Defect concentration in nitrogen-doped graphene grown on Cu substrate: A thickness effect / D. K. Sharma, S. Fateixa, M. J. Hortigüela, et al. — DOI 10.1016/j.physb.2017.03.004 // Physica B: Condensed Matter. — 2017. — Vol. 513. — P. 62-68.
Abstract: Tuning the band-gap of graphene is a current need for real device applications. Copper (Cu) as a substrate plays a crucial role in graphene deposition. Here we report the fabrication of in-situ nitrogen (N) doped graphene via chemical vapor deposition (CVD) technique and the effect of Cu substrate thickness on the growth mechanism. The ratio of intensities of G and D peaks was used to evaluate the defect concentration based on local activation model associated with the distortion of the crystal lattice due to incorporation of nitrogen atoms into graphene lattice. The results suggest that Cu substrate of 20 µm in thickness exhibits higher defect density (1.86×1012 cm−2) as compared to both 10 and 25 µm thick substrates (1.23×1012 cm−2 and 3.09×1011 cm−2, respectively). Furthermore, High Resolution -X-ray Photoelectron Spectroscopy (HR-XPS) precisely affirms ~0.4 at% of nitrogen intercalations in graphene. Our results show that the substitutional type of nitrogen doping dominates over the pyridinic configuration. In addition, X-ray diffraction (XRD) shows all the XRD peaks associated with carbon. However, the peak at ~24° is suppressed by the substrate peaks (Cu). These results suggest that nitrogen atoms can be efficiently incorporated into the graphene using thinner copper substrates, rather than the standard 25 µm ones. This is important for tailoring the properties by graphene required for microelectronic applications. © 2017 Elsevier B.V.
Keywords: CVD
DEFECTS
GRAPHENE
HIGH RESOLUTION-X-RAY PHOTOELECTRON SPECTROSCOPY (HR-XPS)
NITROGEN-DOPING
RAMAN
CARBON
CHEMICAL VAPOR DEPOSITION
COPPER
DEFECT DENSITY
DEFECTS
DEPOSITION
DOPING (ADDITIVES)
ENERGY GAP
GRAPHENE
MICROELECTRONICS
NITROGEN
PHOTOELECTRONS
PHOTONS
VAPOR DEPOSITION
X RAY DIFFRACTION
X RAY PHOTOELECTRON SPECTROSCOPY
CHEMICAL VAPOR DEPOSITIONS (CVD)
DEFECT CONCENTRATIONS
DEVICE APPLICATION
HIGH RESOLUTION
MICROELECTRONIC APPLICATIONS
NITROGEN DOPED GRAPHENE
NITROGEN-DOPING
RAMAN
SUBSTRATES
URI: http://hdl.handle.net/10995/102741
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85014725410
PURE ID: 1692526
869170a9-eee1-46dc-bffe-dd4d0d58ad8b
ISSN: 9214526
DOI: 10.1016/j.physb.2017.03.004
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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