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http://elar.urfu.ru/handle/10995/102455
Title: | Defects and localized states in silica layers implanted with lead ions |
Authors: | Zatsepin, A. F. Fitting, H. -J. Buntov, E. A. Pustovarov, V. A. Schmidt, B. |
Issue Date: | 2014 |
Publisher: | Elsevier |
Citation: | Defects and localized states in silica layers implanted with lead ions / A. F. Zatsepin, H. -J. Fitting, E. A. Buntov, et al. — DOI 10.1016/j.jlumin.2014.05.031 // Journal of Luminescence. — 2014. — Vol. 154. — P. 425-429. |
Abstract: | The luminescence of silica films and glasses implanted with Pb+ ions was studied by means of time-resolved photoluminescence spectroscopy under synchrotron excitation. The ion-modified silica layers are "metal- dielectrics" composites the oxide part of which is represented by amorphous micro-heterogeneous phase with variable Pb2+ions. Two groups of emission centers are identified: such as: (1) radiation-induced oxygen-deficient centers (ODCs) and non-bridging oxygen atoms (NBOs) in the SiO2 matrix and (2) localized electronic states (LS) of the amorphous lead-silicate phase. © 2014 Elsevier B.V. |
Keywords: | LEAD ION IMPLANTATION METAL-DIELECTRIC COMPOSITES PHOTOLUMINESCENCE EXCITATION SILICA UV-VIS-PHOTOLUMINESCENCE DIELECTRIC MATERIALS ION IMPLANTATION LEAD OXYGEN PHOTOLUMINESCENCE SPECTROSCOPY SILICA SILICATES LEAD IONS LOCALIZED ELECTRONIC STATE METAL-DIELECTRIC COMPOSITES NON-BRIDGING OXYGEN ATOMS OXYGEN DEFICIENT CENTERS PHOTO-LUMINESCENCE EXCITATION TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY UV-VIS-PHOTOLUMINESCENCE IONS |
URI: | http://elar.urfu.ru/handle/10995/102455 |
Access: | info:eu-repo/semantics/openAccess |
SCOPUS ID: | 84902687862 |
WOS ID: | 000340687600066 |
PURE ID: | c6e1f9da-49e6-4b55-9119-7f0354e4863f 431945 |
ISSN: | 222313 |
DOI: | 10.1016/j.jlumin.2014.05.031 |
Appears in Collections: | Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC |
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