Defects and localized states in silica layers implanted with lead ions

Abstract

The luminescence of silica films and glasses implanted with Pb+ ions was studied by means of time-resolved photoluminescence spectroscopy under synchrotron excitation. The ion-modified silica layers are "metal- dielectrics" composites the oxide part of which is represented by amorphous micro-heterogeneous phase with variable Pb2+ions. Two groups of emission centers are identified: such as: (1) radiation-induced oxygen-deficient centers (ODCs) and non-bridging oxygen atoms (NBOs) in the SiO2 matrix and (2) localized electronic states (LS) of the amorphous lead-silicate phase. © 2014 Elsevier B.V.