Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/102455
Title: Defects and localized states in silica layers implanted with lead ions
Authors: Zatsepin, A. F.
Fitting, H. -J.
Buntov, E. A.
Pustovarov, V. A.
Schmidt, B.
Issue Date: 2014
Publisher: Elsevier
Citation: Defects and localized states in silica layers implanted with lead ions / A. F. Zatsepin, H. -J. Fitting, E. A. Buntov, et al. — DOI 10.1016/j.jlumin.2014.05.031 // Journal of Luminescence. — 2014. — Vol. 154. — P. 425-429.
Abstract: The luminescence of silica films and glasses implanted with Pb+ ions was studied by means of time-resolved photoluminescence spectroscopy under synchrotron excitation. The ion-modified silica layers are "metal- dielectrics" composites the oxide part of which is represented by amorphous micro-heterogeneous phase with variable Pb2+ions. Two groups of emission centers are identified: such as: (1) radiation-induced oxygen-deficient centers (ODCs) and non-bridging oxygen atoms (NBOs) in the SiO2 matrix and (2) localized electronic states (LS) of the amorphous lead-silicate phase. © 2014 Elsevier B.V.
Keywords: LEAD ION IMPLANTATION
METAL-DIELECTRIC COMPOSITES
PHOTOLUMINESCENCE EXCITATION
SILICA
UV-VIS-PHOTOLUMINESCENCE
DIELECTRIC MATERIALS
ION IMPLANTATION
LEAD
OXYGEN
PHOTOLUMINESCENCE SPECTROSCOPY
SILICA
SILICATES
LEAD IONS
LOCALIZED ELECTRONIC STATE
METAL-DIELECTRIC COMPOSITES
NON-BRIDGING OXYGEN ATOMS
OXYGEN DEFICIENT CENTERS
PHOTO-LUMINESCENCE EXCITATION
TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY
UV-VIS-PHOTOLUMINESCENCE
IONS
URI: http://hdl.handle.net/10995/102455
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 84902687862
PURE ID: 431945
c6e1f9da-49e6-4b55-9119-7f0354e4863f
ISSN: 222313
DOI: 10.1016/j.jlumin.2014.05.031
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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