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dc.contributor.authorZatsepin, A. F.en
dc.contributor.authorFitting, H. -J.en
dc.contributor.authorBuntov, E. A.en
dc.contributor.authorPustovarov, V. A.en
dc.contributor.authorSchmidt, B.en
dc.date.accessioned2021-08-31T15:03:42Z-
dc.date.available2021-08-31T15:03:42Z-
dc.date.issued2014-
dc.identifier.citationDefects and localized states in silica layers implanted with lead ions / A. F. Zatsepin, H. -J. Fitting, E. A. Buntov, et al. — DOI 10.1016/j.jlumin.2014.05.031 // Journal of Luminescence. — 2014. — Vol. 154. — P. 425-429.en
dc.identifier.issn222313-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84902687862&doi=10.1016%2fj.jlumin.2014.05.031&partnerID=40&md5=14ec5ffd3f07d98fa31e16c434001725
dc.identifier.otherhttp://bib-pubdb1.desy.de/record/170044/files/Manuscript-SiO2-Pb.pdfm
dc.identifier.urihttp://elar.urfu.ru/handle/10995/102455-
dc.description.abstractThe luminescence of silica films and glasses implanted with Pb+ ions was studied by means of time-resolved photoluminescence spectroscopy under synchrotron excitation. The ion-modified silica layers are "metal- dielectrics" composites the oxide part of which is represented by amorphous micro-heterogeneous phase with variable Pb2+ions. Two groups of emission centers are identified: such as: (1) radiation-induced oxygen-deficient centers (ODCs) and non-bridging oxygen atoms (NBOs) in the SiO2 matrix and (2) localized electronic states (LS) of the amorphous lead-silicate phase. © 2014 Elsevier B.V.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherElsevieren
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceJ Lumin2
dc.sourceJournal of Luminescenceen
dc.subjectLEAD ION IMPLANTATIONen
dc.subjectMETAL-DIELECTRIC COMPOSITESen
dc.subjectPHOTOLUMINESCENCE EXCITATIONen
dc.subjectSILICAen
dc.subjectUV-VIS-PHOTOLUMINESCENCEen
dc.subjectDIELECTRIC MATERIALSen
dc.subjectION IMPLANTATIONen
dc.subjectLEADen
dc.subjectOXYGENen
dc.subjectPHOTOLUMINESCENCE SPECTROSCOPYen
dc.subjectSILICAen
dc.subjectSILICATESen
dc.subjectLEAD IONSen
dc.subjectLOCALIZED ELECTRONIC STATEen
dc.subjectMETAL-DIELECTRIC COMPOSITESen
dc.subjectNON-BRIDGING OXYGEN ATOMSen
dc.subjectOXYGEN DEFICIENT CENTERSen
dc.subjectPHOTO-LUMINESCENCE EXCITATIONen
dc.subjectTIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPYen
dc.subjectUV-VIS-PHOTOLUMINESCENCEen
dc.subjectIONSen
dc.titleDefects and localized states in silica layers implanted with lead ionsen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1016/j.jlumin.2014.05.031-
dc.identifier.scopus84902687862-
local.contributor.employeeZatsepin, A.F., Ural Federal University, Phys.-Tech. Institute, Mira 19, 620002 Ekaterinburg, Russian Federation
local.contributor.employeeFitting, H.-J., University of Rostock, Institute of Physics, Universitaetsplatz 3, D-18051 Rostock, Germany
local.contributor.employeeBuntov, E.A., Ural Federal University, Phys.-Tech. Institute, Mira 19, 620002 Ekaterinburg, Russian Federation
local.contributor.employeePustovarov, V.A., Ural Federal University, Phys.-Tech. Institute, Mira 19, 620002 Ekaterinburg, Russian Federation
local.contributor.employeeSchmidt, B., Research Center Dresden Rossendorf, Institute of Ion Beam Physics, POB 510119, D-01314 Dresden, Germany
local.description.firstpage425-
local.description.lastpage429-
local.volume154-
dc.identifier.wos000340687600066-
local.contributor.departmentUral Federal University, Phys.-Tech. Institute, Mira 19, 620002 Ekaterinburg, Russian Federation
local.contributor.departmentUniversity of Rostock, Institute of Physics, Universitaetsplatz 3, D-18051 Rostock, Germany
local.contributor.departmentResearch Center Dresden Rossendorf, Institute of Ion Beam Physics, POB 510119, D-01314 Dresden, Germany
local.identifier.purec6e1f9da-49e6-4b55-9119-7f0354e4863fuuid
local.identifier.pure431945-
local.identifier.eid2-s2.0-84902687862-
local.identifier.wosWOS:000340687600066-
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