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Title: Spin-flip Raman scattering of the Γ-X mixed exciton in indirect band gap (In,Al)As/AlAs quantum dots
Authors: Debus, J.
Shamirzaev, T. S.
Dunker, D.
Sapega, V. F.
Ivchenko, E. L.
Yakovlev, D. R.
Toropov, A. I.
Bayer, M.
Issue Date: 2014
Publisher: American Physical Society
Citation: Spin-flip Raman scattering of the Γ-X mixed exciton in indirect band gap (In,Al)As/AlAs quantum dots / J. Debus, T. S. Shamirzaev, D. Dunker, et al. — DOI 10.1103/PhysRevB.90.125431 // Physical Review B - Condensed Matter and Materials Physics. — 2014. — Vol. 90. — Iss. 12. — 125431.
Abstract: The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the Γ- and X-conduction-band valleys, for which their spins may be oriented by resonant spin-flip Raman scattering. This access is used to study the exciton spin-level structure by accurately measuring the anisotropic hole and isotropic electron g factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of Γ-X-valley mixing, as evidenced by both experiment and theory. © 2014 American Physical Society.
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 84907255069
PURE ID: 408688
ISSN: 10980121
DOI: 10.1103/PhysRevB.90.125431
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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