1. Электронный научный архив УрФУ
  2. 00. Общеуниверситетские коллекции
  3. Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC
Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на этот ресурс: http://elar.urfu.ru/handle/10995/102426
Полная запись метаданных
Поле DCЗначениеЯзык
dc.contributor.authorDebus, J.en
dc.contributor.authorShamirzaev, T. S.en
dc.contributor.authorDunker, D.en
dc.contributor.authorSapega, V. F.en
dc.contributor.authorIvchenko, E. L.en
dc.contributor.authorYakovlev, D. R.en
dc.contributor.authorToropov, A. I.en
dc.contributor.authorBayer, M.en
dc.date.accessioned2021-08-31T15:03:35Z-
dc.date.available2021-08-31T15:03:35Z-
dc.date.issued2014-
dc.identifier.citationSpin-flip Raman scattering of the Γ-X mixed exciton in indirect band gap (In,Al)As/AlAs quantum dots / J. Debus, T. S. Shamirzaev, D. Dunker, et al. — DOI 10.1103/PhysRevB.90.125431 // Physical Review B - Condensed Matter and Materials Physics. — 2014. — Vol. 90. — Iss. 12. — 125431.en
dc.identifier.issn10980121-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84907255069&doi=10.1103%2fPhysRevB.90.125431&partnerID=40&md5=0a43f8f9d7fb7d81decb62e68a7412c7
dc.identifier.otherhttp://arxiv.org/pdf/1406.2684m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/102426-
dc.description.abstractThe band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the Γ- and X-conduction-band valleys, for which their spins may be oriented by resonant spin-flip Raman scattering. This access is used to study the exciton spin-level structure by accurately measuring the anisotropic hole and isotropic electron g factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of Γ-X-valley mixing, as evidenced by both experiment and theory. © 2014 American Physical Society.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourcePhys. Rev. B Condens. Matter Mater. Phys.2
dc.sourcePhysical Review B - Condensed Matter and Materials Physicsen
dc.titleSpin-flip Raman scattering of the Γ-X mixed exciton in indirect band gap (In,Al)As/AlAs quantum dotsen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1103/PhysRevB.90.125431-
dc.identifier.scopus84907255069-
local.contributor.employeeDebus, J., Experimentelle Physik 2, Technische Universität Dortmund, Dortmund, 44227, Germany
local.contributor.employeeShamirzaev, T.S., Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.employeeDunker, D., Experimentelle Physik 2, Technische Universität Dortmund, Dortmund, 44227, Germany
local.contributor.employeeSapega, V.F., Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation, Spin Optics Laboratory, St. Petersburg State University, St. Petersburg, 198504, Russian Federation
local.contributor.employeeIvchenko, E.L., Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation
local.contributor.employeeYakovlev, D.R., Experimentelle Physik 2, Technische Universität Dortmund, Dortmund, 44227, Germany, Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation
local.contributor.employeeToropov, A.I., Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
local.contributor.employeeBayer, M., Experimentelle Physik 2, Technische Universität Dortmund, Dortmund, 44227, Germany, Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation
local.issue12-
local.volume90-
dc.identifier.wos000342159400005-
local.contributor.departmentExperimentelle Physik 2, Technische Universität Dortmund, Dortmund, 44227, Germany
local.contributor.departmentRzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
local.contributor.departmentUral Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.departmentIoffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation
local.contributor.departmentSpin Optics Laboratory, St. Petersburg State University, St. Petersburg, 198504, Russian Federation
local.identifier.pure51d0f2bc-da94-48ee-8380-a968ef20bfd3uuid
local.identifier.pure408688-
local.description.order125431-
local.identifier.eid2-s2.0-84907255069-
local.identifier.wosWOS:000342159400005-
Располагается в коллекциях:Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

Файлы этого ресурса:
Файл Описание РазмерФормат 
2-s2.0-84907255069.pdf1,04 MBAdobe PDFПросмотреть/Открыть
Показать базовое описание ресурса Статистика


Все ресурсы в архиве электронных ресурсов защищены авторским правом, все права сохранены.