Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/102397
Title: Optical spectroscopy studies of Cu2ZnSnSe4 thin films
Authors: Yakushev, M. V.
Forbes, I.
Mudryi, A. V.
Grossberg, M.
Krustok, J.
Beattie, N. S.
Moynihan, M.
Rockett, A.
Martin, R. W.
Issue Date: 2015
Publisher: Elsevier
Citation: Optical spectroscopy studies of Cu2ZnSnSe4 thin films / M. V. Yakushev, I. Forbes, A. V. Mudryi, et al. — DOI 10.1016/j.tsf.2014.09.010 // Thin Solid Films. — 2015. — Vol. 582. — P. 154-157.
Abstract: Cu2ZnSnSe4thin films were synthesised by selenisation of magnetron sputtered metal precursors. The band gap determined from the absorption spectra increases from 1.01 eV at 300 K to 1.05 eV at 4.2 K. In lower quality films photoluminescence spectra show a broad, low intensity asymmetric band associated with a recombination of free electrons and holes localised on acceptors in the presence of spatial potential fluctuations. In high quality material the luminescence band becomes intense and narrow resolving two phonon replicas. Its shifts at changing excitation power suggest donor-acceptor pair recombination mechanisms. The proposed model involving two pairs of donors and acceptors is supported by the evolution of the band intensity and spectral position with temperature. Energy levels of the donors and acceptors are estimated using Arrhenius quenching analysis. © 2014 Elsevier B.V.
Keywords: ABSORPTION
CU2ZNSNSE4
DEFECTS
PHOTOLUMINESCENCE
THIN FILMS
ABSORPTION
DEFECTS
ENERGY GAP
PHOTOLUMINESCENCE
THIN FILMS
DONOR-ACCEPTOR-PAIR RECOMBINATION
EXCITATION POWER
HIGH-QUALITY MATERIALS
LUMINESCENCE BAND
OPTICAL SPECTROSCOPY
PHOTOLUMINESCENCE SPECTRUM
POTENTIAL FLUCTUATIONS
SPECTRAL POSITION
COPPER
URI: http://hdl.handle.net/10995/102397
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 84926435469
PURE ID: 431110
ISSN: 406090
DOI: 10.1016/j.tsf.2014.09.010
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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