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  3. Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC
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dc.contributor.authorYakushev, M. V.en
dc.contributor.authorForbes, I.en
dc.contributor.authorMudryi, A. V.en
dc.contributor.authorGrossberg, M.en
dc.contributor.authorKrustok, J.en
dc.contributor.authorBeattie, N. S.en
dc.contributor.authorMoynihan, M.en
dc.contributor.authorRockett, A.en
dc.contributor.authorMartin, R. W.en
dc.date.accessioned2021-08-31T15:03:29Z-
dc.date.available2021-08-31T15:03:29Z-
dc.date.issued2015-
dc.identifier.citationOptical spectroscopy studies of Cu2ZnSnSe4 thin films / M. V. Yakushev, I. Forbes, A. V. Mudryi, et al. — DOI 10.1016/j.tsf.2014.09.010 // Thin Solid Films. — 2015. — Vol. 582. — P. 154-157.en
dc.identifier.issn406090-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84926435469&doi=10.1016%2fj.tsf.2014.09.010&partnerID=40&md5=1d89b697a40fdfe857ba36e6abee8a03
dc.identifier.otherhttp://nrl.northumbria.ac.uk/22092/1/AAM_Yakushev%20et%20al_2014_Optical%20spectroscopy%20studies%20of%20Cu2ZnSnSe4%20thin%20films.pdfm
dc.identifier.urihttp://elar.urfu.ru/handle/10995/102397-
dc.description.abstractCu2ZnSnSe4thin films were synthesised by selenisation of magnetron sputtered metal precursors. The band gap determined from the absorption spectra increases from 1.01 eV at 300 K to 1.05 eV at 4.2 K. In lower quality films photoluminescence spectra show a broad, low intensity asymmetric band associated with a recombination of free electrons and holes localised on acceptors in the presence of spatial potential fluctuations. In high quality material the luminescence band becomes intense and narrow resolving two phonon replicas. Its shifts at changing excitation power suggest donor-acceptor pair recombination mechanisms. The proposed model involving two pairs of donors and acceptors is supported by the evolution of the band intensity and spectral position with temperature. Energy levels of the donors and acceptors are estimated using Arrhenius quenching analysis. © 2014 Elsevier B.V.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherElsevieren
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceThin Solid Films2
dc.sourceThin Solid Filmsen
dc.subjectABSORPTIONen
dc.subjectCU2ZNSNSE4en
dc.subjectDEFECTSen
dc.subjectPHOTOLUMINESCENCEen
dc.subjectTHIN FILMSen
dc.subjectABSORPTIONen
dc.subjectDEFECTSen
dc.subjectENERGY GAPen
dc.subjectPHOTOLUMINESCENCEen
dc.subjectTHIN FILMSen
dc.subjectDONOR-ACCEPTOR-PAIR RECOMBINATIONen
dc.subjectEXCITATION POWERen
dc.subjectHIGH-QUALITY MATERIALSen
dc.subjectLUMINESCENCE BANDen
dc.subjectOPTICAL SPECTROSCOPYen
dc.subjectPHOTOLUMINESCENCE SPECTRUMen
dc.subjectPOTENTIAL FLUCTUATIONSen
dc.subjectSPECTRAL POSITIONen
dc.subjectCOPPERen
dc.titleOptical spectroscopy studies of Cu2ZnSnSe4 thin filmsen
dc.typeConference Paperen
dc.typeinfo:eu-repo/semantics/conferenceObjecten
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1016/j.tsf.2014.09.010-
dc.identifier.scopus84926435469-
local.contributor.employeeYakushev, M.V., Department of Physics, SUPA, Strathclyde University, Glasgow, G4 0NG, United Kingdom, URFU and Ural Branch of RAS, Ekaterinburg, 620002, Russian Federation
local.contributor.employeeForbes, I., Northumbria Photovoltaics Applications Centre, Northumbria University, Ellison Building, Newcastle-upon-Tyne, NE1 8ST, United Kingdom
local.contributor.employeeMudryi, A.V., Department of Physics, SUPA, Strathclyde University, Glasgow, G4 0NG, United Kingdom, Scientific-Practical Material Research Centre, National Academy of Science of Belarus, P. Brovki 19, Minsk, 220072, Belarus
local.contributor.employeeGrossberg, M., Tallinn University Technology, Ehitajate tee 5, Tallinn, 19086, Estonia
local.contributor.employeeKrustok, J., Tallinn University Technology, Ehitajate tee 5, Tallinn, 19086, Estonia
local.contributor.employeeBeattie, N.S., Tallinn University Technology, Ehitajate tee 5, Tallinn, 19086, Estonia
local.contributor.employeeMoynihan, M., Northumbria Photovoltaics Applications Centre, Northumbria University, Ellison Building, Newcastle-upon-Tyne, NE1 8ST, United Kingdom
local.contributor.employeeRockett, A., University of Illinois, Urbana, IL 61801, United States
local.contributor.employeeMartin, R.W., Department of Physics, SUPA, Strathclyde University, Glasgow, G4 0NG, United Kingdom
local.description.firstpage154-
local.description.lastpage157-
local.volume582-
local.contributor.departmentDepartment of Physics, SUPA, Strathclyde University, Glasgow, G4 0NG, United Kingdom
local.contributor.departmentURFU and Ural Branch of RAS, Ekaterinburg, 620002, Russian Federation
local.contributor.departmentNorthumbria Photovoltaics Applications Centre, Northumbria University, Ellison Building, Newcastle-upon-Tyne, NE1 8ST, United Kingdom
local.contributor.departmentScientific-Practical Material Research Centre, National Academy of Science of Belarus, P. Brovki 19, Minsk, 220072, Belarus
local.contributor.departmentTallinn University Technology, Ehitajate tee 5, Tallinn, 19086, Estonia
local.contributor.departmentUniversity of Illinois, Urbana, IL 61801, United States
local.identifier.pure431110-
local.identifier.eid2-s2.0-84926435469-
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