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dc.contributor.authorMinkov, G. M.en
dc.contributor.authorGermanenko, A. V.en
dc.contributor.authorRut, O. E.en
dc.contributor.authorSherstobitov, A. A.en
dc.contributor.authorDvoretski, S. A.en
dc.contributor.authorMikhailov, N. N.en
dc.date.accessioned2021-08-31T15:03:26Z-
dc.date.available2021-08-31T15:03:26Z-
dc.date.issued2015-
dc.identifier.citationWeak antilocalization of holes in HgTe quantum wells with a normal energy spectrum / G. M. Minkov, A. V. Germanenko, O. E. Rut, et al. — DOI 10.1103/PhysRevB.91.205302 // Physical Review B - Condensed Matter and Materials Physics. — 2015. — Vol. 91. — Iss. 20. — 205302.en
dc.identifier.issn10980121-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84929598539&doi=10.1103%2fPhysRevB.91.205302&partnerID=40&md5=259d2247e2fa30edfe508b50282cb121
dc.identifier.otherhttp://arxiv.org/pdf/1411.6870m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/102386-
dc.description.abstractThe results of experimental study of quantum interference effects in small magnetic fields in narrow HgTe quantum wells of hole-type conductivity with a normal energy spectrum are presented. Interpretation of the data is performed with taking into account the strong spin-orbit splitting of the energy spectrum of the two-dimensional hole subband. It is shown that the phase relaxation time found from the analysis of the shape of magnetoconductivity curves in the case when the Fermi level lies in the monotonic part of the energy spectrum of the valence band behaves itself analogously to that observed in narrow HgTe quantum wells of electron-type conductivity. It increases in magnitude with the increasing conductivity and decreasing temperature following the 1/T law. Such a behavior corresponds to the inelasticity of electron-electron interaction as the main mechanism of the phase relaxation and agrees well with the theoretical predictions. For the higher conductivity, despite the fact that the dephasing time remains inversely proportional to the temperature, it strongly decreases with the increasing conductivity. It is presumed that the reason for such a peculiarity could be nonmonotonic character of the hole energy spectrum. An additional channel of inelastic interaction occurs when the Fermi level approaches the secondary maxima in the depth of the valence band. © 2015 American Physical Society.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourcePhys. Rev. B Condens. Matter Mater. Phys.2
dc.sourcePhysical Review B - Condensed Matter and Materials Physicsen
dc.titleWeak antilocalization of holes in HgTe quantum wells with a normal energy spectrumen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1103/PhysRevB.91.205302-
dc.identifier.scopus84929598539-
local.contributor.employeeMinkov, G.M., M. N. Miheev Institute of Metal Physics, Ural Branch of Russian Academy of Sciences, Ekaterinburg, 620137, Russian Federation, Institute of Natural Sciences, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.employeeGermanenko, A.V., Institute of Natural Sciences, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.employeeRut, O.E., Institute of Natural Sciences, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.employeeSherstobitov, A.A., M. N. Miheev Institute of Metal Physics, Ural Branch of Russian Academy of Sciences, Ekaterinburg, 620137, Russian Federation, Institute of Natural Sciences, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.employeeDvoretski, S.A., Institute of Semiconductor Physics RAS, Novosibirsk, 630090, Russian Federation
local.contributor.employeeMikhailov, N.N., Institute of Semiconductor Physics RAS, Novosibirsk, 630090, Russian Federation
local.issue20-
local.volume91-
dc.identifier.wos000353966400002-
local.contributor.departmentM. N. Miheev Institute of Metal Physics, Ural Branch of Russian Academy of Sciences, Ekaterinburg, 620137, Russian Federation
local.contributor.departmentInstitute of Natural Sciences, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.departmentInstitute of Semiconductor Physics RAS, Novosibirsk, 630090, Russian Federation
local.identifier.pure52bb6d71-3354-4cb8-881a-b8f9874f4bffuuid
local.identifier.pure342310-
local.description.order205302-
local.identifier.eid2-s2.0-84929598539-
local.identifier.wosWOS:000353966400002-
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