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dc.contributor.authorMurugadoss, G.en
dc.contributor.authorArunachalam, P.en
dc.contributor.authorPanda, S. K.en
dc.contributor.authorRajesh, Kumar, M.en
dc.contributor.authorRajabathar, J. R.en
dc.contributor.authorAl-Lohedan, H.en
dc.contributor.authorWasmiah, M. D.en
dc.date.accessioned2021-08-31T15:02:52Z-
dc.date.available2021-08-31T15:02:52Z-
dc.date.issued2021-
dc.identifier.citationCrystal stabilization of α-FAPbI3perovskite by rapid annealing method in industrial scale / G. Murugadoss, P. Arunachalam, S. K. Panda, et al. — DOI 10.1016/j.jmrt.2021.03.107 // Journal of Materials Research and Technology. — 2021. — Vol. 12. — P. 1924-1930.en
dc.identifier.issn22387854-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Gold3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85106940338&doi=10.1016%2fj.jmrt.2021.03.107&partnerID=40&md5=5112ed78040c890f6e69282736fd6237
dc.identifier.urihttp://elar.urfu.ru/handle/10995/102261-
dc.description.abstractOrganic-inorganic hybrid formamidinium lead iodide (FAPbI3) perovskite has shown tremendous attention in recently developed photovoltaics and optelectronic devices. However, it suffers from structural instability complications, particularly the spontaneous phase transition from a dark color photoactive perovskite phase (α-FAPbI3) to a yellow color photo-inactive phase (δ-FAPbI3) at room temperature. To stabilize the photoactive α-FAPbI3, several methods were employed, including compositional engineering, 2D layer deposition on the surface, and solvent engineering method. In this communication, we have proposed a facile sequential rapid annealing method to produce the photoactive α-FAPbI3 perovskite on an industrial scale, which is highly stable at room temperature. The structural, morphological, compositional, and optical properties of the perovskite were studied using X-ray diffraction (XRD), UV-visible absorption, Laser Raman, thermogravimetric analysis (TGA), and field emission electron microscopy with elemental analysis (FE-SEM & EDAX). The strong characteristic diffraction peaks of cubic structure in XRD showed the proposed additives free preparation method is more adaptable for the preparation of high quality α-FAPbI3 perovskite for optoelectronic applications. © 2021 The Author(s).en
dc.description.sponsorshipDr. G. Murugadoss acknowledges to the management of Sathyabama Institute of Science and Technology, Chennai, Tamilnadu, India for provided lab facility. We extend their appreciation to the Deputyship for Research & Innovation, “Ministry of Education” in Saudi Arabia for funding this research work through the project no. ( IFKSURG-1440-014 ).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherElsevier Editora Ltdaen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceJ. Mater. Res. Technol.2
dc.sourceJournal of Materials Research and Technologyen
dc.subjectMICROSTRUCTUREen
dc.subjectPHASE CHANGE/STABILITYen
dc.subjectRAPID ANNEALINGen
dc.subjectX-RAY TECHNIQUESen
dc.subjectΑ-FAPBI3en
dc.subjectADDITIVESen
dc.subjectANNEALINGen
dc.subjectCRYSTAL STRUCTUREen
dc.subjectIODINE COMPOUNDSen
dc.subjectLAYERED SEMICONDUCTORSen
dc.subjectLEAD COMPOUNDSen
dc.subjectOPTICAL PROPERTIESen
dc.subjectORGANIC-INORGANIC MATERIALSen
dc.subjectPEROVSKITEen
dc.subjectQUALITY CONTROLen
dc.subjectTHERMOGRAVIMETRIC ANALYSISen
dc.subjectX RAY DIFFRACTIONen
dc.subjectANNEALING METHODSen
dc.subjectCRYSTAL STABILIZATIONen
dc.subjectINDUSTRIAL SCALEen
dc.subjectLEAD IODIDEen
dc.subjectORGANIC/INORGANIC HYBRIDSen
dc.subjectPHASE CHANGE/STABILITYen
dc.subjectRAPID ANNEALINGen
dc.subjectX- RAY DIFFRACTIONSen
dc.subjectX-RAY TECHNIQUESen
dc.subjectΑ-FAPBI3en
dc.subjectMICROSTRUCTUREen
dc.titleCrystal stabilization of α-FAPbI3perovskite by rapid annealing method in industrial scaleen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.rsi46818646-
dc.identifier.doi10.1016/j.jmrt.2021.03.107-
dc.identifier.scopus85106940338-
local.contributor.employeeMurugadoss, G., Centre for Nanoscience and Nanotechnology, Sathyabama Institute of Science and Technology, Chennai, 600119, India
local.contributor.employeeArunachalam, P., Chemistry Department, College of Science, King Saud University, Riyadh, 11451, Saudi Arabia
local.contributor.employeePanda, S.K., EMF Division, CSIR-Central Electrochemical Research Institute (CSIR-CECRI), Karaikudi, 630003, India
local.contributor.employeeRajesh Kumar, M., Institute of Natural Science and Mathematics, Ural Federal University, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeRajabathar, J.R., Chemistry Department, College of Science, King Saud University, Riyadh, 11451, Saudi Arabia
local.contributor.employeeAl-Lohedan, H., Chemistry Department, College of Science, King Saud University, Riyadh, 11451, Saudi Arabia
local.contributor.employeeWasmiah, M.D., Chemistry Department, College of Science, King Saud University, Riyadh, 11451, Saudi Arabia
local.description.firstpage1924-
local.description.lastpage1930-
local.volume12-
dc.identifier.wos000654677100005-
local.contributor.departmentCentre for Nanoscience and Nanotechnology, Sathyabama Institute of Science and Technology, Chennai, 600119, India
local.contributor.departmentChemistry Department, College of Science, King Saud University, Riyadh, 11451, Saudi Arabia
local.contributor.departmentEMF Division, CSIR-Central Electrochemical Research Institute (CSIR-CECRI), Karaikudi, 630003, India
local.contributor.departmentInstitute of Natural Science and Mathematics, Ural Federal University, Yekaterinburg, 620002, Russian Federation
local.identifier.pure22093925-
local.identifier.pure9c4be19c-db07-4f9c-a746-e251bcd8e3ccuuid
local.identifier.eid2-s2.0-85106940338-
local.identifier.wosWOS:000654677100005-
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