Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/102228
Title: Size effect in the kinetic properties in "sized" films of Bi2Se3topological insulator
Authors: Chistyakov, V. V.
Domozhirova, A. N.
Huang, J. C. A.
Marchenkov, V. V.
Issue Date: 2020
Publisher: IOP Publishing Ltd
Citation: Size effect in the kinetic properties in "sized" films of Bi2Se3topological insulator / V. V. Chistyakov, A. N. Domozhirova, J. C. A. Huang, et al. — DOI 10.1088/1742-6596/1695/1/012147 // Journal of Physics: Conference Series. — 2020. — Vol. 1695. — Iss. 1. — 012147.
Abstract: The Hall resistivity and magnetoresistivity of topological insulator Bi2Se3 thin films with a thickness from 30 nm to 75 nm in the temperature range from 4.2 to 80 K and magnetic fields of up to 10 T were measured. A size effect in the kinetic properties of bismuth selenide films was studied, i.e. a dependence of the Hall coefficient and magnetoconductivity of film dimensions. It was suggested that a similar size effect should be observed in other kinetic electronic properties, both of topological insulators and topological semimetals. © Published under licence by IOP Publishing Ltd.
Keywords: ELECTRIC INSULATORS
ELECTRONIC PROPERTIES
KINETICS
NANOSTRUCTURES
OPTOELECTRONIC DEVICES
PHOTONICS
SELENIUM COMPOUNDS
SIZE DETERMINATION
THIN FILMS
TOPOLOGICAL INSULATORS
BISMUTH SELENIDE
FILM DIMENSIONS
HALL COEFFICIENT
HALL RESISTIVITY
KINETIC PROPERTIES
MAGNETO-CONDUCTIVITY
SIZE EFFECTS
TEMPERATURE RANGE
BISMUTH COMPOUNDS
URI: http://hdl.handle.net/10995/102228
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85098845898
PURE ID: 20454283
df713abe-0217-4b7b-93a7-cd92e167d27b
ISSN: 17426588
DOI: 10.1088/1742-6596/1695/1/012147
metadata.dc.description.sponsorship: The results of paper were obtained within the state assignment of Ministry of Science and Higher Education of the Russian Federation (theme “Spin” No. АААА-А18-118020290104-2) and partly supported by the Russian Foundation for Basic Research (grant No. 20-32-90069) and by the Government of Russia (contract No. 02.A03.21.0006).
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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