Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на этот ресурс:
http://elar.urfu.ru/handle/10995/102228
Название: | Size effect in the kinetic properties in "sized" films of Bi2Se3topological insulator |
Авторы: | Chistyakov, V. V. Domozhirova, A. N. Huang, J. C. A. Marchenkov, V. V. |
Дата публикации: | 2020 |
Издатель: | IOP Publishing Ltd |
Библиографическое описание: | Size effect in the kinetic properties in "sized" films of Bi2Se3topological insulator / V. V. Chistyakov, A. N. Domozhirova, J. C. A. Huang, et al. — DOI 10.1088/1742-6596/1695/1/012147 // Journal of Physics: Conference Series. — 2020. — Vol. 1695. — Iss. 1. — 012147. |
Аннотация: | The Hall resistivity and magnetoresistivity of topological insulator Bi2Se3 thin films with a thickness from 30 nm to 75 nm in the temperature range from 4.2 to 80 K and magnetic fields of up to 10 T were measured. A size effect in the kinetic properties of bismuth selenide films was studied, i.e. a dependence of the Hall coefficient and magnetoconductivity of film dimensions. It was suggested that a similar size effect should be observed in other kinetic electronic properties, both of topological insulators and topological semimetals. © Published under licence by IOP Publishing Ltd. |
Ключевые слова: | ELECTRIC INSULATORS ELECTRONIC PROPERTIES KINETICS NANOSTRUCTURES OPTOELECTRONIC DEVICES PHOTONICS SELENIUM COMPOUNDS SIZE DETERMINATION THIN FILMS TOPOLOGICAL INSULATORS BISMUTH SELENIDE FILM DIMENSIONS HALL COEFFICIENT HALL RESISTIVITY KINETIC PROPERTIES MAGNETO-CONDUCTIVITY SIZE EFFECTS TEMPERATURE RANGE BISMUTH COMPOUNDS |
URI: | http://elar.urfu.ru/handle/10995/102228 |
Условия доступа: | info:eu-repo/semantics/openAccess |
Идентификатор SCOPUS: | 85098845898 |
Идентификатор PURE: | 20454283 df713abe-0217-4b7b-93a7-cd92e167d27b |
ISSN: | 17426588 |
DOI: | 10.1088/1742-6596/1695/1/012147 |
Сведения о поддержке: | The results of paper were obtained within the state assignment of Ministry of Science and Higher Education of the Russian Federation (theme “Spin” No. АААА-А18-118020290104-2) and partly supported by the Russian Foundation for Basic Research (grant No. 20-32-90069) and by the Government of Russia (contract No. 02.A03.21.0006). |
Располагается в коллекциях: | Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC |
Файлы этого ресурса:
Файл | Описание | Размер | Формат | |
---|---|---|---|---|
2-s2.0-85098845898.pdf | 886,37 kB | Adobe PDF | Просмотреть/Открыть |
Все ресурсы в архиве электронных ресурсов защищены авторским правом, все права сохранены.