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dc.contributor.authorChistyakov, V. V.en
dc.contributor.authorDomozhirova, A. N.en
dc.contributor.authorHuang, J. C. A.en
dc.contributor.authorMarchenkov, V. V.en
dc.date.accessioned2021-08-31T15:02:35Z-
dc.date.available2021-08-31T15:02:35Z-
dc.date.issued2020-
dc.identifier.citationSize effect in the kinetic properties in "sized" films of Bi2Se3topological insulator / V. V. Chistyakov, A. N. Domozhirova, J. C. A. Huang, et al. — DOI 10.1088/1742-6596/1695/1/012147 // Journal of Physics: Conference Series. — 2020. — Vol. 1695. — Iss. 1. — 012147.en
dc.identifier.issn17426588-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Bronze3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85098845898&doi=10.1088%2f1742-6596%2f1695%2f1%2f012147&partnerID=40&md5=f45ab2db6a8d3db696b42c4bc678f2e3
dc.identifier.urihttp://elar.urfu.ru/handle/10995/102228-
dc.description.abstractThe Hall resistivity and magnetoresistivity of topological insulator Bi2Se3 thin films with a thickness from 30 nm to 75 nm in the temperature range from 4.2 to 80 K and magnetic fields of up to 10 T were measured. A size effect in the kinetic properties of bismuth selenide films was studied, i.e. a dependence of the Hall coefficient and magnetoconductivity of film dimensions. It was suggested that a similar size effect should be observed in other kinetic electronic properties, both of topological insulators and topological semimetals. © Published under licence by IOP Publishing Ltd.en
dc.description.sponsorshipThe results of paper were obtained within the state assignment of Ministry of Science and Higher Education of the Russian Federation (theme “Spin” No. АААА-А18-118020290104-2) and partly supported by the Russian Foundation for Basic Research (grant No. 20-32-90069) and by the Government of Russia (contract No. 02.A03.21.0006).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherIOP Publishing Ltden
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceJ. Phys. Conf. Ser.2
dc.sourceJournal of Physics: Conference Seriesen
dc.subjectELECTRIC INSULATORSen
dc.subjectELECTRONIC PROPERTIESen
dc.subjectKINETICSen
dc.subjectNANOSTRUCTURESen
dc.subjectOPTOELECTRONIC DEVICESen
dc.subjectPHOTONICSen
dc.subjectSELENIUM COMPOUNDSen
dc.subjectSIZE DETERMINATIONen
dc.subjectTHIN FILMSen
dc.subjectTOPOLOGICAL INSULATORSen
dc.subjectBISMUTH SELENIDEen
dc.subjectFILM DIMENSIONSen
dc.subjectHALL COEFFICIENTen
dc.subjectHALL RESISTIVITYen
dc.subjectKINETIC PROPERTIESen
dc.subjectMAGNETO-CONDUCTIVITYen
dc.subjectSIZE EFFECTSen
dc.subjectTEMPERATURE RANGEen
dc.subjectBISMUTH COMPOUNDSen
dc.titleSize effect in the kinetic properties in "sized" films of Bi2Se3topological insulatoren
dc.typeConference Paperen
dc.typeinfo:eu-repo/semantics/conferenceObjecten
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1088/1742-6596/1695/1/012147-
dc.identifier.scopus85098845898-
local.contributor.employeeChistyakov, V.V., M. N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.employeeDomozhirova, A.N., M. N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.employeeHuang, J.C.A., National Cheng Kung University, Tainan, 70101, Taiwan
local.contributor.employeeMarchenkov, V.V., M. N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.issue1-
local.volume1695-
local.contributor.departmentM. N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.departmentNational Cheng Kung University, Tainan, 70101, Taiwan
local.contributor.departmentUral Federal University, Ekaterinburg, 620002, Russian Federation
local.identifier.pure20454283-
local.identifier.puredf713abe-0217-4b7b-93a7-cd92e167d27buuid
local.description.order012147-
local.identifier.eid2-s2.0-85098845898-
local.fund.rffi20-32-90069-
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