Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/102111
Title: High-pressure behavior of superconducting boron-doped diamond
Authors: Abdel-Hafiez, M.
Kumar, D.
Thiyagarajan, R.
Zhang, Q.
Howie, R. T.
Sethupathi, K.
Volkova, O.
Vasiliev, A.
Yang, W.
Mao, H. K.
Rao, M. S. R.
Issue Date: 2017
Publisher: American Physical Society
Citation: High-pressure behavior of superconducting boron-doped diamond / M. Abdel-Hafiez, D. Kumar, R. Thiyagarajan, et al. — DOI 10.1103/PhysRevB.95.174519 // Physical Review B. — 2017. — Vol. 95. — Iss. 17. — 174519.
Abstract: This work investigates the high-pressure structure of freestanding superconducting (Tc=4.3 K) boron-doped diamond (BDD) and how it affects the electronic and vibrational properties using Raman spectroscopy and x-ray diffraction in the 0-30 GPa range. High-pressure Raman scattering experiments revealed an abrupt change in the linear pressure coefficients, and the grain boundary components undergo an irreversible phase change at 14 GPa. We show that the blueshift in the pressure-dependent vibrational modes correlates with the negative pressure coefficient of Tc in BDD. The analysis of x-ray diffraction data determines the equation of state of the BDD film, revealing a high bulk modulus of B0=510±28 GPa. The comparative analysis of high-pressure data clarified that the sp2 carbons in the grain boundaries transform into hexagonal diamond. ©2017 American Physical Society.
Keywords: BOOLEAN FUNCTIONS
BORON
ELECTRONIC PROPERTIES
EQUATIONS OF STATE
GRAIN BOUNDARIES
X RAY DIFFRACTION
BOUNDARY COMPONENTS
COMPARATIVE ANALYSIS
HIGH PRESSURE RAMAN
HIGH-PRESSURE BEHAVIOR
HIGH-PRESSURE STRUCTURES
NEGATIVE PRESSURE COEFFICIENT
VIBRATIONAL PROPERTIES
X-RAY DIFFRACTION DATA
DIAMONDS
URI: http://hdl.handle.net/10995/102111
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85021420799
PURE ID: 1810986
ISSN: 24699950
DOI: 10.1103/PhysRevB.95.174519
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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