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dc.contributor.authorAbdel-Hafiez, M.en
dc.contributor.authorKumar, D.en
dc.contributor.authorThiyagarajan, R.en
dc.contributor.authorZhang, Q.en
dc.contributor.authorHowie, R. T.en
dc.contributor.authorSethupathi, K.en
dc.contributor.authorVolkova, O.en
dc.contributor.authorVasiliev, A.en
dc.contributor.authorYang, W.en
dc.contributor.authorMao, H. K.en
dc.contributor.authorRao, M. S. R.en
dc.date.accessioned2021-08-31T15:01:51Z-
dc.date.available2021-08-31T15:01:51Z-
dc.date.issued2017-
dc.identifier.citationHigh-pressure behavior of superconducting boron-doped diamond / M. Abdel-Hafiez, D. Kumar, R. Thiyagarajan, et al. — DOI 10.1103/PhysRevB.95.174519 // Physical Review B. — 2017. — Vol. 95. — Iss. 17. — 174519.en
dc.identifier.issn24699950-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85021420799&doi=10.1103%2fPhysRevB.95.174519&partnerID=40&md5=86832213e479c399df2f156a2f22287c
dc.identifier.otherhttp://arxiv.org/pdf/1709.07611m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/102111-
dc.description.abstractThis work investigates the high-pressure structure of freestanding superconducting (Tc=4.3 K) boron-doped diamond (BDD) and how it affects the electronic and vibrational properties using Raman spectroscopy and x-ray diffraction in the 0-30 GPa range. High-pressure Raman scattering experiments revealed an abrupt change in the linear pressure coefficients, and the grain boundary components undergo an irreversible phase change at 14 GPa. We show that the blueshift in the pressure-dependent vibrational modes correlates with the negative pressure coefficient of Tc in BDD. The analysis of x-ray diffraction data determines the equation of state of the BDD film, revealing a high bulk modulus of B0=510±28 GPa. The comparative analysis of high-pressure data clarified that the sp2 carbons in the grain boundaries transform into hexagonal diamond. ©2017 American Physical Society.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourcePhys. Rev. B2
dc.sourcePhysical Review Ben
dc.subjectBOOLEAN FUNCTIONSen
dc.subjectBORONen
dc.subjectELECTRONIC PROPERTIESen
dc.subjectEQUATIONS OF STATEen
dc.subjectGRAIN BOUNDARIESen
dc.subjectX RAY DIFFRACTIONen
dc.subjectBOUNDARY COMPONENTSen
dc.subjectCOMPARATIVE ANALYSISen
dc.subjectHIGH PRESSURE RAMANen
dc.subjectHIGH-PRESSURE BEHAVIORen
dc.subjectHIGH-PRESSURE STRUCTURESen
dc.subjectNEGATIVE PRESSURE COEFFICIENTen
dc.subjectVIBRATIONAL PROPERTIESen
dc.subjectX-RAY DIFFRACTION DATAen
dc.subjectDIAMONDSen
dc.titleHigh-pressure behavior of superconducting boron-doped diamonden
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1103/PhysRevB.95.174519-
dc.identifier.scopus85021420799-
local.contributor.employeeAbdel-Hafiez, M., Center for High Pressure Science and Technology Advanced Research, Beijing, 100094, China
local.contributor.employeeKumar, D., Department of Physics, Nano Functional Materials Technology Centre, Materials Science Research Centre, Indian Institute of Technology Madras, Chennai, Tamil Nadu, 600036, India
local.contributor.employeeThiyagarajan, R., Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China
local.contributor.employeeZhang, Q., Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China
local.contributor.employeeHowie, R.T., Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China
local.contributor.employeeSethupathi, K., Department of Physics, Low Temperature Physics Laboratory, Indian Institute of Technology (IIT) Madras, Chennai, Tamil Nadu, 600036, India
local.contributor.employeeVolkova, O., Low Temperature Physics and Superconductivity Department, Physics Faculty, M. V. Lomonosov Moscow State University, Moscow, 119991, Russian Federation, Theoretical Physics and Applied Mathematics Department, Ural Federal University, Ekaterinburg, 620002, Russian Federation, National University of Science and Technology, MISiS, Moscow, 119049, Russian Federation
local.contributor.employeeVasiliev, A., Low Temperature Physics and Superconductivity Department, Physics Faculty, M. V. Lomonosov Moscow State University, Moscow, 119991, Russian Federation, National University of Science and Technology, MISiS, Moscow, 119049, Russian Federation, National Research South Ural State University, Chelyabinsk, 454080, Russian Federation
local.contributor.employeeYang, W., Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China
local.contributor.employeeMao, H.K., Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China
local.contributor.employeeRao, M.S.R., Department of Physics, Nano Functional Materials Technology Centre, Materials Science Research Centre, Indian Institute of Technology Madras, Chennai, Tamil Nadu, 600036, India
local.issue17-
local.volume95-
local.contributor.departmentCenter for High Pressure Science and Technology Advanced Research, Beijing, 100094, China
local.contributor.departmentDepartment of Physics, Nano Functional Materials Technology Centre, Materials Science Research Centre, Indian Institute of Technology Madras, Chennai, Tamil Nadu, 600036, India
local.contributor.departmentCenter for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China
local.contributor.departmentDepartment of Physics, Low Temperature Physics Laboratory, Indian Institute of Technology (IIT) Madras, Chennai, Tamil Nadu, 600036, India
local.contributor.departmentLow Temperature Physics and Superconductivity Department, Physics Faculty, M. V. Lomonosov Moscow State University, Moscow, 119991, Russian Federation
local.contributor.departmentTheoretical Physics and Applied Mathematics Department, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.departmentNational University of Science and Technology, MISiS, Moscow, 119049, Russian Federation
local.contributor.departmentNational Research South Ural State University, Chelyabinsk, 454080, Russian Federation
local.identifier.pure1810986-
local.description.order174519-
local.identifier.eid2-s2.0-85021420799-
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