Please use this identifier to cite or link to this item: http://elar.urfu.ru/handle/10995/101996
Title: Stimulated Emission and Optical Properties of Solid Solutions of Cu(In,Ga)Se2 Direct Band Gap Semiconductors
Authors: Svitsiankou, I. E.
Pavlovskii, V. N.
Lutsenko, E. V.
Yablonskii, G. P.
Mudryi, A. V.
Borodavchenko, O. M.
Zhivulko, V. D.
Yakushev, M. V.
Martin, R.
Issue Date: 2018
Publisher: Springer New York LLC
Citation: Stimulated Emission and Optical Properties of Solid Solutions of Cu(In,Ga)Se2 Direct Band Gap Semiconductors / I. E. Svitsiankou, V. N. Pavlovskii, E. V. Lutsenko, et al. — DOI 10.1007/s10812-018-0643-3 // Journal of Applied Spectroscopy. — 2018. — Vol. 85. — Iss. 2. — P. 267-273.
Abstract: Stimulated emission, optical properties, and structural characteristics of non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films deposited on soda lime glass substrates using co-evaporation of elements in a multistage process were investigated. X-ray diffraction analysis, scanning electron microscopy, X-ray spectral analysis with energy dispersion, low-temperature photoluminescence, optical transmittance and reflectance were used to study the films. Stimulated emission at low temperatures of ~20 K was found in non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films upon excitation by laser pulses of nanosecond duration with a threshold power density of ~20 kW/cm2. It was shown that the appearance and parameters of the stimulated emission depend strongly on the concentration of ion-induced defects in Cu(In,Ga)Se2 thin films. © 2018, Springer Science+Business Media, LLC, part of Springer Nature.
Keywords: CU(IN,GA)SE2
DEFECT
PROTON
STIMULATED EMISSION
THIN FILM
URI: http://elar.urfu.ru/handle/10995/101996
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85046462693
WOS ID: 000431887200011
PURE ID: 1a24d3be-a743-4380-b7dc-be698c6c20cb
7278728
ISSN: 219037
DOI: 10.1007/s10812-018-0643-3
Appears in Collections:Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

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