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  3. Научные публикации, проиндексированные в SCOPUS и WoS CC
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dc.contributor.authorSvitsiankou, I. E.en
dc.contributor.authorPavlovskii, V. N.en
dc.contributor.authorLutsenko, E. V.en
dc.contributor.authorYablonskii, G. P.en
dc.contributor.authorMudryi, A. V.en
dc.contributor.authorBorodavchenko, O. M.en
dc.contributor.authorZhivulko, V. D.en
dc.contributor.authorYakushev, M. V.en
dc.contributor.authorMartin, R.en
dc.date.accessioned2021-08-31T15:01:10Z-
dc.date.available2021-08-31T15:01:10Z-
dc.date.issued2018-
dc.identifier.citationStimulated Emission and Optical Properties of Solid Solutions of Cu(In,Ga)Se2 Direct Band Gap Semiconductors / I. E. Svitsiankou, V. N. Pavlovskii, E. V. Lutsenko, et al. — DOI 10.1007/s10812-018-0643-3 // Journal of Applied Spectroscopy. — 2018. — Vol. 85. — Iss. 2. — P. 267-273.en
dc.identifier.issn219037-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85046462693&doi=10.1007%2fs10812-018-0643-3&partnerID=40&md5=4f6d3a26af71170994ea6dac073e52af
dc.identifier.otherhttps://strathprints.strath.ac.uk/64210/1/Svitsiankou_etal_JAS_2018_Stimulated_emission_and_optical_properties_of_solid_solutions_of_Cu_In_Ga_Se2.pdfm
dc.identifier.urihttp://elar.urfu.ru/handle/10995/101996-
dc.description.abstractStimulated emission, optical properties, and structural characteristics of non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films deposited on soda lime glass substrates using co-evaporation of elements in a multistage process were investigated. X-ray diffraction analysis, scanning electron microscopy, X-ray spectral analysis with energy dispersion, low-temperature photoluminescence, optical transmittance and reflectance were used to study the films. Stimulated emission at low temperatures of ~20 K was found in non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films upon excitation by laser pulses of nanosecond duration with a threshold power density of ~20 kW/cm2. It was shown that the appearance and parameters of the stimulated emission depend strongly on the concentration of ion-induced defects in Cu(In,Ga)Se2 thin films. © 2018, Springer Science+Business Media, LLC, part of Springer Nature.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherSpringer New York LLCen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceJ. Appl. Spectrosc.2
dc.sourceJournal of Applied Spectroscopyen
dc.subjectCU(IN,GA)SE2en
dc.subjectDEFECTen
dc.subjectPROTONen
dc.subjectSTIMULATED EMISSIONen
dc.subjectTHIN FILMen
dc.titleStimulated Emission and Optical Properties of Solid Solutions of Cu(In,Ga)Se2 Direct Band Gap Semiconductorsen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1007/s10812-018-0643-3-
dc.identifier.scopus85046462693-
local.contributor.employeeSvitsiankou, I.E., B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68-2 Nezavisimost′ Ave., Minsk, 220072, Belarus
local.contributor.employeePavlovskii, V.N., B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68-2 Nezavisimost′ Ave., Minsk, 220072, Belarus
local.contributor.employeeLutsenko, E.V., B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68-2 Nezavisimost′ Ave., Minsk, 220072, Belarus
local.contributor.employeeYablonskii, G.P., B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68-2 Nezavisimost′ Ave., Minsk, 220072, Belarus
local.contributor.employeeMudryi, A.V., Scientific-Practical Materials Research Center of the National Academy of Sciences of Belarus, Minsk, Belarus
local.contributor.employeeBorodavchenko, O.M., Scientific-Practical Materials Research Center of the National Academy of Sciences of Belarus, Minsk, Belarus
local.contributor.employeeZhivulko, V.D., Scientific-Practical Materials Research Center of the National Academy of Sciences of Belarus, Minsk, Belarus
local.contributor.employeeYakushev, M.V., Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg, Russian Federation, Ural Federal University, Ekaterinburg, Russian Federation, Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, Ekaterinburg, Russian Federation, Strathclyde University, Glasgow, United Kingdom
local.contributor.employeeMartin, R., Strathclyde University, Glasgow, United Kingdom
local.description.firstpage267-
local.description.lastpage273-
local.issue2-
local.volume85-
local.contributor.departmentB. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68-2 Nezavisimost′ Ave., Minsk, 220072, Belarus
local.contributor.departmentScientific-Practical Materials Research Center of the National Academy of Sciences of Belarus, Minsk, Belarus
local.contributor.departmentInstitute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg, Russian Federation
local.contributor.departmentUral Federal University, Ekaterinburg, Russian Federation
local.contributor.departmentInstitute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, Ekaterinburg, Russian Federation
local.contributor.departmentStrathclyde University, Glasgow, United Kingdom
local.identifier.pure7278728-
local.identifier.pure1a24d3be-a743-4380-b7dc-be698c6c20cbuuid
local.identifier.eid2-s2.0-85046462693-
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