Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/101963
Title: Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure
Authors: Dorosheva, I. B.
Vokhmintsev, A. S.
Kamalov, R. V.
Gryaznov, A. O.
Weinstein, I. A.
Issue Date: 2018
Publisher: Institute of Electrical and Electronics Engineers Inc.
Citation: Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure / I. B. Dorosheva, A. S. Vokhmintsev, R. V. Kamalov, et al. — DOI 10.1109/USBEREIT.2018.8384604 // Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018. — 2018. — P. 279-282.
Abstract: Self-ordered nanotubular titania TiO2-NT with outer tube diameter of 45 nm are synthesized using the anodic oxidation of titanium foil. Four sets of memristors with 100 μm diameter based on Ti/TiO2-NT/Au sandwich structures with an oxide layer thickness of 80, 120, 160 and 200 nm are fabricated. Current-voltage (CV) characteristics for the obtained samples in the static and dynamic operation modes are studied. Resistance in high and low resistance states is estimated. Basing on the analysis of the CV characteristics in dynamic mode (> 14 000 switchings) a prospective of use for synthesized Ti/TiO2-NT/Au micromemristors with oxide layer thickness of 160 nm in non-volatile memory is shown. © 2018 IEEE.
Keywords: ANODIC TITANIA
MEMRISTOR
NANOTUBULAR STRUCTURE
RESISTIVE SWITCHING
TITANIUM DIOXIDE NANOTUBES
ANODIC OXIDATION
BIOMEDICAL ENGINEERING
DIGITAL STORAGE
MEMRISTORS
TITANIUM DIOXIDE
YARN
ANODIC TITANIA
MEMRISTOR
NANO-TUBULAR STRUCTURE
RESISTIVE SWITCHING
TITANIUM DIOXIDE NANOTUBES
TITANIUM OXIDES
URI: http://hdl.handle.net/10995/101963
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85049888588
PURE ID: 7655477
85751e11-3bda-4b15-959e-b9441358e54d
ISBN: 9781538649466
DOI: 10.1109/USBEREIT.2018.8384604
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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