Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/101961
Title: Unidirectional synapse-like behavior of Zr/ZrO2-NT/Au layered structure
Authors: Vokhmintsev, A. S.
Kamalov, R. V.
Kozhevina, A. V.
Petrenyov, I. A.
Martemyanov, N. A.
Weinstein, I. A.
Issue Date: 2018
Publisher: Institute of Electrical and Electronics Engineers Inc.
Citation: Unidirectional synapse-like behavior of Zr/ZrO2-NT/Au layered structure / A. S. Vokhmintsev, R. V. Kamalov, A. V. Kozhevina, et al. — DOI 10.1109/USBEREIT.2018.8384620 // Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018. — 2018. — P. 348-351.
Abstract: Zirconia nanotubular layer with an outer tube diameter 25 nm was synthesized by potentiostatic anodization. The Zr/ZrO2-NT/Au memristive structure is fabricated using stencil mask and magnetron sputtering techniques. Current-voltage characteristics are measured in full cycles of resistive switching with varying parameters of the applied harmonic voltage. An equivalent circuit with unidirectional electrical conductivity for the studied structure is proposed. Estimates of the electrical resistance of memristors in high-and intermediate resistivity states are performed. The high synaptic plasticity of memristors based on the Zr/ZrO2-NT/Au structure is shown. © 2018 IEEE.
Keywords: ANODIZATION
MEMRISTOR
RESISTIVE SWITCHING
ZIRCONIA NANOTUBES
BIOMEDICAL ENGINEERING
CURRENT VOLTAGE CHARACTERISTICS
EQUIVALENT CIRCUITS
YARN
ZIRCONIA
ANODIZATIONS
ELECTRICAL CONDUCTIVITY
ELECTRICAL RESISTANCES
MEMRISTOR
RESISTIVE SWITCHING
SYNAPTIC PLASTICITY
VARYING PARAMETERS
ZIRCONIA NANOTUBES
MEMRISTORS
URI: http://hdl.handle.net/10995/101961
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85049906943
PURE ID: 7654364
0912d04f-de4d-42c3-a8c0-0a2fc9404305
ISBN: 9781538649466
DOI: 10.1109/USBEREIT.2018.8384620
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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