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dc.contributor.authorVokhmintsev, A. S.en
dc.contributor.authorKamalov, R. V.en
dc.contributor.authorKozhevina, A. V.en
dc.contributor.authorPetrenyov, I. A.en
dc.contributor.authorMartemyanov, N. A.en
dc.contributor.authorWeinstein, I. A.en
dc.date.accessioned2021-08-31T15:00:55Z-
dc.date.available2021-08-31T15:00:55Z-
dc.date.issued2018-
dc.identifier.citationUnidirectional synapse-like behavior of Zr/ZrO2-NT/Au layered structure / A. S. Vokhmintsev, R. V. Kamalov, A. V. Kozhevina, et al. — DOI 10.1109/USBEREIT.2018.8384620 // Proceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018. — 2018. — P. 348-351.en
dc.identifier.isbn9781538649466-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85049906943&doi=10.1109%2fUSBEREIT.2018.8384620&partnerID=40&md5=62092f5a17141cc64d194819e5510a5d
dc.identifier.otherhttp://arxiv.org/pdf/1906.06549m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/101961-
dc.description.abstractZirconia nanotubular layer with an outer tube diameter 25 nm was synthesized by potentiostatic anodization. The Zr/ZrO2-NT/Au memristive structure is fabricated using stencil mask and magnetron sputtering techniques. Current-voltage characteristics are measured in full cycles of resistive switching with varying parameters of the applied harmonic voltage. An equivalent circuit with unidirectional electrical conductivity for the studied structure is proposed. Estimates of the electrical resistance of memristors in high-and intermediate resistivity states are performed. The high synaptic plasticity of memristors based on the Zr/ZrO2-NT/Au structure is shown. © 2018 IEEE.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceProc. - Ural Symp. Biomed. Eng., Radioelectron. Inf. Technol., USBEREIT2
dc.sourceProceedings - 2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2018en
dc.subjectANODIZATIONen
dc.subjectMEMRISTORen
dc.subjectRESISTIVE SWITCHINGen
dc.subjectZIRCONIA NANOTUBESen
dc.subjectBIOMEDICAL ENGINEERINGen
dc.subjectCURRENT VOLTAGE CHARACTERISTICSen
dc.subjectEQUIVALENT CIRCUITSen
dc.subjectYARNen
dc.subjectZIRCONIAen
dc.subjectANODIZATIONSen
dc.subjectELECTRICAL CONDUCTIVITYen
dc.subjectELECTRICAL RESISTANCESen
dc.subjectMEMRISTORen
dc.subjectRESISTIVE SWITCHINGen
dc.subjectSYNAPTIC PLASTICITYen
dc.subjectVARYING PARAMETERSen
dc.subjectZIRCONIA NANOTUBESen
dc.subjectMEMRISTORSen
dc.titleUnidirectional synapse-like behavior of Zr/ZrO2-NT/Au layered structureen
dc.typeConference Paperen
dc.typeinfo:eu-repo/semantics/conferenceObjecten
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.rsi35759624-
dc.identifier.doi10.1109/USBEREIT.2018.8384620-
dc.identifier.scopus85049906943-
local.contributor.employeeVokhmintsev, A.S., NANOTECH Center, Ural Federal University, Yekaterinburg, Russian Federation
local.contributor.employeeKamalov, R.V., NANOTECH Center, Ural Federal University, Yekaterinburg, Russian Federation
local.contributor.employeeKozhevina, A.V., NANOTECH Center, Ural Federal University, Yekaterinburg, Russian Federation
local.contributor.employeePetrenyov, I.A., NANOTECH Center, Ural Federal University, Yekaterinburg, Russian Federation
local.contributor.employeeMartemyanov, N.A., NANOTECH Center, Ural Federal University, Yekaterinburg, Russian Federation
local.contributor.employeeWeinstein, I.A., NANOTECH Center, Ural Federal University, Yekaterinburg, Russian Federation
local.description.firstpage348-
local.description.lastpage351-
local.contributor.departmentNANOTECH Center, Ural Federal University, Yekaterinburg, Russian Federation
local.identifier.pure7654364-
local.identifier.pure0912d04f-de4d-42c3-a8c0-0a2fc9404305uuid
local.identifier.eid2-s2.0-85049906943-
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