Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/101781
Title: HgTe quantum wells with inverted band structure: Quantum Hall effect and the large-scale impurity potential
Authors: Gudina, S. V.
Arapov, Yu. G.
Neverov, V. N.
Podgornykh, S. M.
Popov, M. R.
Deriushkina, E. V.
Shelushinina, N. G.
Yakunin, M. V.
Mikhailov, N. N.
Dvoretsky, S. A.
Issue Date: 2019
Publisher: American Institute of Physics Inc.
Citation: HgTe quantum wells with inverted band structure: Quantum Hall effect and the large-scale impurity potential / S. V. Gudina, Yu. G. Arapov, V. N. Neverov, et al. — DOI 10.1063/1.5093521 // Low Temperature Physics. — 2019. — Vol. 45. — Iss. 4. — P. 412-418.
Abstract: We report on the longitudinal and Hall resistivities of a HgTe quantum well with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH) regime at magnetic fields up to 9 T and temperatures 2.9-50 K. The temperature dependence of the QH plateau-plateau transition (PPT) widths and of variable range hopping (VRH) conduction on the Hall plateaus are analyzed. The data are presented in a genuine scale form both for PPT regions and for VRH regime. Decisive role of the long-range random potential (the potential of remote ionized impurities) in the localization-delocalization processes in the QH regime for the system under study is revealed. © 2019 Author(s).
Keywords: MERCURY COMPOUNDS
SEMICONDUCTOR QUANTUM WELLS
TELLURIUM COMPOUNDS
TEMPERATURE DISTRIBUTION
DELOCALIZATION PROCESS
ENERGY SPECTRA
HALL RESISTIVITY
IONIZED IMPURITIES
QUANTUM HALL REGIME
RANDOM POTENTIALS
TEMPERATURE DEPENDENCE
VARIABLE-RANGE-HOPPING CONDUCTIONS
QUANTUM HALL EFFECT
URI: http://hdl.handle.net/10995/101781
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85063966175
PURE ID: 9312269
7f540370-27ec-4a68-bee3-b7944c413c19
ISSN: 1063777X
DOI: 10.1063/1.5093521
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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