1. Электронный научный архив УрФУ
  2. 00. Общеуниверситетские коллекции
  3. Научные публикации, проиндексированные в SCOPUS и WoS CC
Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на этот ресурс: http://elar.urfu.ru/handle/10995/101781
Полная запись метаданных
Поле DCЗначениеЯзык
dc.contributor.authorGudina, S. V.en
dc.contributor.authorArapov, Yu. G.en
dc.contributor.authorNeverov, V. N.en
dc.contributor.authorPodgornykh, S. M.en
dc.contributor.authorPopov, M. R.en
dc.contributor.authorDeriushkina, E. V.en
dc.contributor.authorShelushinina, N. G.en
dc.contributor.authorYakunin, M. V.en
dc.contributor.authorMikhailov, N. N.en
dc.contributor.authorDvoretsky, S. A.en
dc.date.accessioned2021-08-31T14:59:42Z-
dc.date.available2021-08-31T14:59:42Z-
dc.date.issued2019-
dc.identifier.citationHgTe quantum wells with inverted band structure: Quantum Hall effect and the large-scale impurity potential / S. V. Gudina, Yu. G. Arapov, V. N. Neverov, et al. — DOI 10.1063/1.5093521 // Low Temperature Physics. — 2019. — Vol. 45. — Iss. 4. — P. 412-418.en
dc.identifier.issn1063777X-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85063966175&doi=10.1063%2f1.5093521&partnerID=40&md5=a23cd84dd7b7149b65579a175fcc879a
dc.identifier.otherhttp://dspace.nbuv.gov.ua/xmlui/bitstream/123456789/176079/1/09-Gudina.pdfm
dc.identifier.urihttp://elar.urfu.ru/handle/10995/101781-
dc.description.abstractWe report on the longitudinal and Hall resistivities of a HgTe quantum well with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH) regime at magnetic fields up to 9 T and temperatures 2.9-50 K. The temperature dependence of the QH plateau-plateau transition (PPT) widths and of variable range hopping (VRH) conduction on the Hall plateaus are analyzed. The data are presented in a genuine scale form both for PPT regions and for VRH regime. Decisive role of the long-range random potential (the potential of remote ionized impurities) in the localization-delocalization processes in the QH regime for the system under study is revealed. © 2019 Author(s).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Institute of Physics Inc.en
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceLow Temp. Phys2
dc.sourceLow Temperature Physicsen
dc.subjectMERCURY COMPOUNDSen
dc.subjectSEMICONDUCTOR QUANTUM WELLSen
dc.subjectTELLURIUM COMPOUNDSen
dc.subjectTEMPERATURE DISTRIBUTIONen
dc.subjectDELOCALIZATION PROCESSen
dc.subjectENERGY SPECTRAen
dc.subjectHALL RESISTIVITYen
dc.subjectIONIZED IMPURITIESen
dc.subjectQUANTUM HALL REGIMEen
dc.subjectRANDOM POTENTIALSen
dc.subjectTEMPERATURE DEPENDENCEen
dc.subjectVARIABLE-RANGE-HOPPING CONDUCTIONSen
dc.subjectQUANTUM HALL EFFECTen
dc.titleHgTe quantum wells with inverted band structure: Quantum Hall effect and the large-scale impurity potentialen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1063/1.5093521-
dc.identifier.scopus85063966175-
local.contributor.employeeGudina, S.V., M.N. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, 18 S. Kovalevskaya Str., Ekaterinburg, 620108, Russian Federation
local.contributor.employeeArapov, Yu.G., M.N. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, 18 S. Kovalevskaya Str., Ekaterinburg, 620108, Russian Federation
local.contributor.employeeNeverov, V.N., M.N. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, 18 S. Kovalevskaya Str., Ekaterinburg, 620108, Russian Federation
local.contributor.employeePodgornykh, S.M., M.N. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, 18 S. Kovalevskaya Str., Ekaterinburg, 620108, Russian Federation, Ural Federal University, 19 Mira Str., Ekaterinburg, 620002, Russian Federation
local.contributor.employeePopov, M.R., M.N. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, 18 S. Kovalevskaya Str., Ekaterinburg, 620108, Russian Federation
local.contributor.employeeDeriushkina, E.V., M.N. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, 18 S. Kovalevskaya Str., Ekaterinburg, 620108, Russian Federation
local.contributor.employeeShelushinina, N.G., M.N. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, 18 S. Kovalevskaya Str., Ekaterinburg, 620108, Russian Federation
local.contributor.employeeYakunin, M.V., M.N. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, 18 S. Kovalevskaya Str., Ekaterinburg, 620108, Russian Federation, Ural Federal University, 19 Mira Str., Ekaterinburg, 620002, Russian Federation
local.contributor.employeeMikhailov, N.N., A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13 Lavrentyev Ave., Novosibirsk, 630090, Russian Federation
local.contributor.employeeDvoretsky, S.A., A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13 Lavrentyev Ave., Novosibirsk, 630090, Russian Federation
local.description.firstpage412-
local.description.lastpage418-
local.issue4-
local.volume45-
local.contributor.departmentM.N. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, 18 S. Kovalevskaya Str., Ekaterinburg, 620108, Russian Federation
local.contributor.departmentUral Federal University, 19 Mira Str., Ekaterinburg, 620002, Russian Federation
local.contributor.departmentA. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13 Lavrentyev Ave., Novosibirsk, 630090, Russian Federation
local.identifier.pure9312269-
local.identifier.pure7f540370-27ec-4a68-bee3-b7944c413c19uuid
local.identifier.eid2-s2.0-85063966175-
Располагается в коллекциях:Научные публикации, проиндексированные в SCOPUS и WoS CC

Файлы этого ресурса:
Файл Описание РазмерФормат 
2-s2.0-85063966175.pdf1,04 MBAdobe PDFПросмотреть/Открыть
Показать базовое описание ресурса Статистика  Google Scholar





Все ресурсы в архиве электронных ресурсов защищены авторским правом, все права сохранены.