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dc.contributor.authorZatsepin, D. A.en
dc.contributor.authorBoukhvalov, D. W.en
dc.contributor.authorZatsepin, A. F.en
dc.contributor.authorVines, L.en
dc.contributor.authorGogova, D.en
dc.contributor.authorShur, V. Y.en
dc.contributor.authorEsin, A. A.en
dc.contributor.authorШур, В. Я.ru
dc.date.accessioned2021-08-31T14:59:02Z-
dc.date.available2021-08-31T14:59:02Z-
dc.date.issued2019-
dc.identifier.citationBulk In2O3 crystals grown by chemical vapour transport: a combination of XPS and DFT studies / D. A. Zatsepin, D. W. Boukhvalov, A. F. Zatsepin, et al. — DOI 10.1007/s10854-019-02228-6 // Journal of Materials Science: Materials in Electronics. — 2019. — Vol. 30. — Iss. 20. — P. 18753-18758.en
dc.identifier.issn9574522-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85073596597&doi=10.1007%2fs10854-019-02228-6&partnerID=40&md5=8e1697df9aea9c523a794815fbf345ee
dc.identifier.otherhttps://www.duo.uio.no/bitstream/10852/76185/1/In2O3_Zatsepin_preprint.pdfm
dc.identifier.urihttp://elar.urfu.ru/handle/10995/101691-
dc.description.abstractHigh purity In2O3 crystals were synthesized by the chemical vapour transport (CVT) as confirmed by X-ray Photoelectron Spectroscopy (XPS) using survey, core-levels and valence band scans of the samples. Further, high energy resolution XPS spectra revealed perfectly bonded In 3d configuration and excluded the presence of metallic In0, concurrently, the dual band observed for O 1s configuration was interpreted in term of the additional defectiveness in the oxygen sublattice. The valence band as measured by XPS is in agreement with the calculated one using DFT approach, and an insignificant shift of valence band toward Fermi level (about 0.05 eV) caused by the presence of the defects was established. Moreover, the energetics of the primarily defects were calculated and the trends were set in the perspective of XPS measurements. Altogether we make CVT In2O3 crystals ready to be used for the onward studies and technical applications. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherSpringer New York LLCen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceJ Mater Sci Mater Electron2
dc.sourceJournal of Materials Science: Materials in Electronicsen
dc.subjectDEFECTSen
dc.subjectVALENCE BANDSen
dc.subjectVARIABLE SPEED TRANSMISSIONSen
dc.subjectX RAY PHOTOELECTRON SPECTROSCOPYen
dc.subject3D CONFIGURATIONSen
dc.subjectCHEMICAL VAPOUR TRANSPORTen
dc.subjectHIGH PURITYen
dc.subjectHIGH-ENERGY RESOLUTIONen
dc.subjectOXYGEN SUBLATTICESen
dc.subjectTECHNICAL APPLICATIONSen
dc.subjectXPS MEASUREMENTSen
dc.subjectXPS SPECTRAen
dc.subjectINDIUM COMPOUNDSen
dc.titleBulk In2O3 crystals grown by chemical vapour transport: a combination of XPS and DFT studiesen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1007/s10854-019-02228-6-
dc.identifier.scopus85073596597-
local.contributor.employeeZatsepin, D.A., Institute of Physics and Technology, Ural Federal University, Mira Str. 19, Yekaterinburg, 620002, Russian Federation, M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 18 Kovalevskoj Str, Yekaterinburg, 620990, Russian Federation
local.contributor.employeeBoukhvalov, D.W., Institute of Physics and Technology, Ural Federal University, Mira Str. 19, Yekaterinburg, 620002, Russian Federation, College of Science, Institute of Materials Physics and Chemistry, Nanjing Forestry University, Nanjing, 210037, China
local.contributor.employeeZatsepin, A.F., Institute of Physics and Technology, Ural Federal University, Mira Str. 19, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeVines, L., Department of Physics, University of Oslo, P.O. Box 1048, Blindern, Oslo, Norway
local.contributor.employeeGogova, D., Department of Physics, University of Oslo, P.O. Box 1048, Blindern, Oslo, Norway
local.contributor.employeeShur, V.Y., Institute of Natural Sciences, Ural Federal University, 51 Lenin Ave, Yekaterinburg, 620000, Russian Federation
local.contributor.employeeEsin, A.A., Institute of Natural Sciences, Ural Federal University, 51 Lenin Ave, Yekaterinburg, 620000, Russian Federation
local.description.firstpage18753-
local.description.lastpage18758-
local.issue20-
local.volume30-
dc.identifier.wos000490627900043-
local.contributor.departmentInstitute of Physics and Technology, Ural Federal University, Mira Str. 19, Yekaterinburg, 620002, Russian Federation
local.contributor.departmentM.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 18 Kovalevskoj Str, Yekaterinburg, 620990, Russian Federation
local.contributor.departmentCollege of Science, Institute of Materials Physics and Chemistry, Nanjing Forestry University, Nanjing, 210037, China
local.contributor.departmentDepartment of Physics, University of Oslo, P.O. Box 1048, Blindern, Oslo, Norway
local.contributor.departmentInstitute of Natural Sciences, Ural Federal University, 51 Lenin Ave, Yekaterinburg, 620000, Russian Federation
local.identifier.pure5f8989d3-33a5-447e-b927-3793b6c40663uuid
local.identifier.pure11114680-
local.identifier.eid2-s2.0-85073596597-
local.identifier.wosWOS:000490627900043-
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