Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/101679
Title: Strong electron-phonon coupling and its influence on the transport and optical properties of hole-doped single-layer inse
Authors: Lugovskoi, A. V.
Katsnelson, M. I.
Rudenko, A. N.
Issue Date: 2019
Publisher: American Physical Society
Citation: Lugovskoi A. V. Strong electron-phonon coupling and its influence on the transport and optical properties of hole-doped single-layer inse / A. V. Lugovskoi, M. I. Katsnelson, A. N. Rudenko. — DOI 10.1103/PhysRevLett.123.176401 // Physical Review Letters. — 2019. — Vol. 123. — Iss. 17. — 176401.
Abstract: We show that hole states in recently discovered single-layer InSe are strongly renormalized by the coupling with acoustic phonons. The coupling is enhanced significantly at moderate hole doping (∼1013 cm-2) due to hexagonal warping of the Fermi surface. While the system remains dynamically stable, its electron-phonon spectral function exhibits sharp low-energy resonances, leading to the formation of satellite quasiparticle states near the Fermi energy. Such many-body renormalization is predicted to have two important consequences. First, it significantly suppresses charge carrier mobility reaching ∼1 cm2 V-1 s-1 at 100 K in a freestanding sample. Second, it gives rise to unusual temperature-dependent optical excitations in the midinfrared region. Relatively small charge carrier concentrations and realistic temperatures suggest that these excitations may be observed experimentally. © 2019 American Physical Society.
Keywords: ELECTRON-PHONON INTERACTIONS
INDIUM COMPOUNDS
OPTICAL PROPERTIES
SELENIUM COMPOUNDS
ACOUSTIC PHONONS
ELECTRON PHONON COUPLINGS
ENERGY RESONANCE
MID-INFRARED REGIONS
QUASI-PARTICLE STATE
RENORMALIZATION
SPECTRAL FUNCTION
TEMPERATURE DEPENDENT
CARRIER MOBILITY
ARTICLE
DOPING
EXCITATION
PHONON
URI: http://hdl.handle.net/10995/101679
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85074453835
PURE ID: 11121117
aad08437-f77a-42c1-91f7-ccdfdf97ed8f
ISSN: 319007
DOI: 10.1103/PhysRevLett.123.176401
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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