Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на этот ресурс: http://elar.urfu.ru/handle/10995/101679
Полная запись метаданных
Поле DCЗначениеЯзык
dc.contributor.authorLugovskoi, A. V.en
dc.contributor.authorKatsnelson, M. I.en
dc.contributor.authorRudenko, A. N.en
dc.date.accessioned2021-08-31T14:58:56Z-
dc.date.available2021-08-31T14:58:56Z-
dc.date.issued2019-
dc.identifier.citationLugovskoi A. V. Strong electron-phonon coupling and its influence on the transport and optical properties of hole-doped single-layer inse / A. V. Lugovskoi, M. I. Katsnelson, A. N. Rudenko. — DOI 10.1103/PhysRevLett.123.176401 // Physical Review Letters. — 2019. — Vol. 123. — Iss. 17. — 176401.en
dc.identifier.issn319007-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85074453835&doi=10.1103%2fPhysRevLett.123.176401&partnerID=40&md5=a1cbaafe8e4009d84ccb5a0a943e07c2
dc.identifier.otherhttps://repository.ubn.ru.nl/bitstream/2066/209544/1/209544.pdfm
dc.identifier.urihttp://elar.urfu.ru/handle/10995/101679-
dc.description.abstractWe show that hole states in recently discovered single-layer InSe are strongly renormalized by the coupling with acoustic phonons. The coupling is enhanced significantly at moderate hole doping (∼1013 cm-2) due to hexagonal warping of the Fermi surface. While the system remains dynamically stable, its electron-phonon spectral function exhibits sharp low-energy resonances, leading to the formation of satellite quasiparticle states near the Fermi energy. Such many-body renormalization is predicted to have two important consequences. First, it significantly suppresses charge carrier mobility reaching ∼1 cm2 V-1 s-1 at 100 K in a freestanding sample. Second, it gives rise to unusual temperature-dependent optical excitations in the midinfrared region. Relatively small charge carrier concentrations and realistic temperatures suggest that these excitations may be observed experimentally. © 2019 American Physical Society.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourcePhys Rev Lett2
dc.sourcePhysical Review Lettersen
dc.subjectELECTRON-PHONON INTERACTIONSen
dc.subjectINDIUM COMPOUNDSen
dc.subjectOPTICAL PROPERTIESen
dc.subjectSELENIUM COMPOUNDSen
dc.subjectACOUSTIC PHONONSen
dc.subjectELECTRON PHONON COUPLINGSen
dc.subjectENERGY RESONANCEen
dc.subjectMID-INFRARED REGIONSen
dc.subjectQUASI-PARTICLE STATEen
dc.subjectRENORMALIZATIONen
dc.subjectSPECTRAL FUNCTIONen
dc.subjectTEMPERATURE DEPENDENTen
dc.subjectCARRIER MOBILITYen
dc.subjectARTICLEen
dc.subjectDOPINGen
dc.subjectEXCITATIONen
dc.subjectPHONONen
dc.titleStrong electron-phonon coupling and its influence on the transport and optical properties of hole-doped single-layer inseen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1103/PhysRevLett.123.176401-
dc.identifier.scopus85074453835-
local.contributor.employeeLugovskoi, A.V., Institute for Molecules and Materials, Radboud University, Heijendaalseweg 135, AJ Nijmegen, NL-6525, Netherlands
local.contributor.employeeKatsnelson, M.I., Institute for Molecules and Materials, Radboud University, Heijendaalseweg 135, AJ Nijmegen, NL-6525, Netherlands, Theoretical Physics and Applied Mathematics Department, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.employeeRudenko, A.N., Institute for Molecules and Materials, Radboud University, Heijendaalseweg 135, AJ Nijmegen, NL-6525, Netherlands, Theoretical Physics and Applied Mathematics Department, Ural Federal University, Ekaterinburg, 620002, Russian Federation, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
local.issue17-
local.volume123-
dc.identifier.wos000491998300009-
local.contributor.departmentInstitute for Molecules and Materials, Radboud University, Heijendaalseweg 135, AJ Nijmegen, NL-6525, Netherlands
local.contributor.departmentTheoretical Physics and Applied Mathematics Department, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.departmentSchool of Physics and Technology, Wuhan University, Wuhan, 430072, China
local.identifier.pureaad08437-f77a-42c1-91f7-ccdfdf97ed8fuuid
local.identifier.pure11121117-
local.description.order176401-
local.identifier.eid2-s2.0-85074453835-
local.identifier.wosWOS:000491998300009-
local.identifier.pmid31702262-
Располагается в коллекциях:Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

Файлы этого ресурса:
Файл Описание РазмерФормат 
2-s2.0-85074453835.pdf4,9 MBAdobe PDFПросмотреть/Открыть


Все ресурсы в архиве электронных ресурсов защищены авторским правом, все права сохранены.