Browsing by Author Neverov, V. N.

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Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
2017Activation transport under quantum Hall regime in HgTe-based heterostructureGudina, S. V.; Neverov, V. N.; Novik, E. G.; Ilchenko, E. V.; Harus, G. I.; Shelushinina, N. G.; Podgornykh, S. M.; Yakunin, M. V.; Mikhailov, N. N.; Dvoretsky, S. A.
2019Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wellsGudina, S. V.; Arapov, Y. G.; Neverov, V. N.; Savelyev, A. P.; Podgornykh, S. M.; Shelushinina, N. G.; Yakunin, M. V.
2018Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures (Semiconductors, (2018), 52, 12, (1551-1558), 10.1134/S1063782618120102)Gudina, S. V.; Arapov, Y. G.; Ilchenko, E. V.; Neverov, V. N.; Savelyev, A. P.; Podgornykh, S. M.; Shelushinina, N. G.; Yakunin, M. V.; Vasil’evskii, I. S.; Vinichenko, A. N.
2019HgTe quantum wells with inverted band structure: Quantum Hall effect and the large-scale impurity potentialGudina, S. V.; Arapov, Yu. G.; Neverov, V. N.; Podgornykh, S. M.; Popov, M. R.; Deriushkina, E. V.; Shelushinina, N. G.; Yakunin, M. V.; Mikhailov, N. N.; Dvoretsky, S. A.
2021Quasiclassical calculations of Landau level spectrum for 20.5-nm-wide H gTe quantum well: "extremum loop" model and effects of cubic symmetryGudina, S. V.; Bogolubskiy, A. S.; Neverov, V. N.; Turutkin, K. V.; Shelushinina, N. G.; Yakunin, M. V.
2013Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with strongly coupled double quantum wellsArapov, Y. G.; Gudina, S. V.; Neverov, V. N.; Podgornykh, S. M.; Yakunin, M. V.
2013Tunneling effects in tilted magnetic fields in n-InGaAs/GaAs structures with strongly coupled double quantum wellsArapov, Y. G.; Gudina, S. V.; Klepikova, A. S.; Neverov, V. N.; Podgornykh, S. M.; Yakunin, M. V.; Zvonkov, B. N.