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Title: | Electrical Properties of Tungstates Ln2(WO4)3 (Ln–Gd, Ho) |
Authors: | Lopatin, D. A. Guseva, A. F. Pestereva, N. N. Vostrotina, E. L. Baldina, L. I. |
Issue Date: | 2016 |
Publisher: | Knowledge E |
Citation: | Electrical Properties of Tungstates Ln2(WO4)3 (Ln–Gd, Ho) / D. A. Lopatin, A. F. Guseva, N. N. Pestereva, E. L. Vostrotina, L. I. Baldina // ASRTU Conference Proceedings : IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology (Ekaterinburg, Russia, 23–26 June 2016). — Dubai : Knowledge E, 2016. — pp. 103-108. — DOI: 10.18502/kms.v1i1.570 |
Abstract: | Electrical properties of Gd2(WO4)3 and Ho2(WO4)3 were studied and the type of charge carriers was determined. The studied compounds have a salt-like isle structure with isolated tetrahedrons. It crystallises in the Eu2(WO4)3 structural type, so-called `defective scheelite', in which 1/3 of Ln sites are vacant, Ln2/3[V L n ]1/3WO4. Predominant ionic conductivity in Ln2(WO4)3 (Ln = Gd, Ho) was established both by the EMF method and from independence of conductivity versus oxygen partial pressure. A minor contribution (4-11%) of the anion [WO4]2− transport was detected by the Tubandt method, which along with the results of the EMF technique proves the predominant oxygen conductivity. |
Keywords: | LANTHANIDE TUNGSTATES ION TRANSFERENCE NUMBERS TUBANDT METHOD ELECTRICAL CONDUCTIVITY VERSUS TEMPERATURE OXYGEN PARTIAL PRESSURE |
URI: | http://elar.urfu.ru/handle/10995/63283 |
Conference name: | IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology |
Conference date: | 23.06.2016-26.06.2016 |
WOS ID: | WOS:000395106000018 |
ISSN: | 2519-1438 |
DOI: | 10.18502/kms.v1i1.570 |
metadata.dc.description.sponsorship: | The research results were obtained in the framework of the State Task of the Ministry of Education and Science of Russia and supported by the grants of the Russian Foundation for Basic Research RFBR 14-03-00804_a. The equipment of the Ural Center for Shared Use “Modern nanotechnology” UrFU was used. |
Origin: | IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology. — Ekaterinburg, 2016 |
Appears in Collections: | АТУРК |
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