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dc.contributor.authorLopatin, D. A.en
dc.contributor.authorGuseva, A. F.en
dc.contributor.authorPestereva, N. N.en
dc.contributor.authorVostrotina, E. L.en
dc.contributor.authorBaldina, L. I.en
dc.date.accessioned2018-10-21T17:37:14Z-
dc.date.available2018-10-21T17:37:14Z-
dc.date.issued2016-
dc.identifier.citationElectrical Properties of Tungstates Ln2(WO4)3 (Ln–Gd, Ho) / D. A. Lopatin, A. F. Guseva, N. N. Pestereva, E. L. Vostrotina, L. I. Baldina // ASRTU Conference Proceedings : IV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology (Ekaterinburg, Russia, 23–26 June 2016). — Dubai : Knowledge E, 2016. — pp. 103-108. — DOI: 10.18502/kms.v1i1.570en
dc.identifier.issn2519-1438-
dc.identifier.urihttp://elar.urfu.ru/handle/10995/63283-
dc.description.abstractElectrical properties of Gd2(WO4)3 and Ho2(WO4)3 were studied and the type of charge carriers was determined. The studied compounds have a salt-like isle structure with isolated tetrahedrons. It crystallises in the Eu2(WO4)3 structural type, so-called `defective scheelite', in which 1/3 of Ln sites are vacant, Ln2/3[V L n ]1/3WO4. Predominant ionic conductivity in Ln2(WO4)3 (Ln = Gd, Ho) was established both by the EMF method and from independence of conductivity versus oxygen partial pressure. A minor contribution (4-11%) of the anion [WO4]2− transport was detected by the Tubandt method, which along with the results of the EMF technique proves the predominant oxygen conductivity.en
dc.description.sponsorshipThe research results were obtained in the framework of the State Task of the Ministry of Education and Science of Russia and supported by the grants of the Russian Foundation for Basic Research RFBR 14-03-00804_a. The equipment of the Ural Center for Shared Use “Modern nanotechnology” UrFU was used.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherKnowledge Een
dc.relation.ispartofIV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology. — Ekaterinburg, 2016en
dc.subjectLANTHANIDE TUNGSTATESen
dc.subjectION TRANSFERENCE NUMBERSen
dc.subjectTUBANDT METHODen
dc.subjectELECTRICAL CONDUCTIVITY VERSUS TEMPERATUREen
dc.subjectOXYGEN PARTIAL PRESSUREen
dc.titleElectrical Properties of Tungstates Ln2(WO4)3 (Ln–Gd, Ho)en
dc.typeConference Paperen
dc.typeinfo:eu-repo/semantics/conferenceObjecten
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.conference.nameIV Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technologyen
dc.conference.date23.06.2016-26.06.2016-
dc.identifier.doi10.18502/kms.v1i1.570-
local.description.firstpage103-
local.description.lastpage108-
dc.identifier.wosWOS:000395106000018-
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