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dc.contributor.authorDomozhirova, A. N.en
dc.contributor.authorMakhnev, A. A.en
dc.contributor.authorShreder, E. I.en
dc.contributor.authorNaumov, S. V.en
dc.contributor.authorLukoyanov, A. V.en
dc.contributor.authorChistyakov, V. V.en
dc.contributor.authorHuang, J. C. A.en
dc.contributor.authorSemiannikova, A. A.en
dc.contributor.authorKorenistov, P. S.en
dc.contributor.authorMarchenkov, V. V.en
dc.date.accessioned2020-10-20T16:36:15Z-
dc.date.available2020-10-20T16:36:15Z-
dc.date.issued2019-
dc.identifier.citationElectronic properties of WTe2 and MoTe2 single crystals / A. N. Domozhirova, A. A. Makhnev, E. I. Shreder, S. V. Naumov, et al.. — DOI 10.1088/1742-6596/1389/1/012149 // Journal of Physics: Conference Series. — 2019. — Vol. 1. — Iss. 1389. — 12149.en
dc.identifier.issn1742-6588-
dc.identifier.otherhttps://doi.org/10.1088/1742-6596/1389/1/012149pdf
dc.identifier.other1good_DOI
dc.identifier.other890daad3-2084-4a6f-ad06-941bc9e43906pure_uuid
dc.identifier.otherhttp://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85076747841m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/92553-
dc.description.abstractWTe2 and MoTe2 single crystals were grown, and their electrical resistivity in the temperature range from 80 K to 300 K, optical properties at room temperature in the spectral range of 0.17-5.0 eV were studied as well as theoretical calculations of the electronic structure were performed. It is shown that the temperature dependence of the electrical resistivity of orthorhombic WTe2 has a metallic type with resistivity value of (0.5-1) mOhmcm, while hexagonal MoTe2 has a semiconductor one and resistivity value (0.5-1) Ohmcm, which is three orders of magnitude larger than the resistivity of WTe2. Optical properties indicated that there is no contribution from free carriers in the entire spectral range studied. The calculated densities of the electronic states of MoTe2 and WTe2 showed the presence of a bunch of the molybdenum and tungsten electronic states in a wide energy interval with strong admixing of tellurium states. In the WTe2 compound, the larger number of the electronic states is located near the Fermi energy, characterizing a more metallic state in this compound as compared to MoTe2. © Published under licence by IOP Publishing Ltd.en
dc.description.sponsorshipGovernment Council on Grants, Russian Federation: 02, 211en
dc.description.sponsorshipRussian Foundation for Basic Research, RFBR: 17-52-52008en
dc.description.sponsorshipMinistry of Education and Science of the Russian Federation, Minobrnauka: АААА-А18-118020190098-5en
dc.description.sponsorshipThe research was carried out within the state assignment of Ministry of Education and Science of the Russian Federation (theme “Spin” No. АААА-А18-118020290104-2 and theme “Electron” No. АААА-А18-118020190098-5), supported in part by RFBR (Project No. 17-52-52008) and the Government of Russian Federation (Decree No. 211, Contract No. 02.A03.21.0006).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherInstitute of Physics Publishingen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceJournal of Physics: Conference Seriesen
dc.subjectCRYSTAL STRUCTUREen
dc.subjectELECTRIC CONDUCTIVITYen
dc.subjectELECTRONIC PROPERTIESen
dc.subjectELECTRONIC STATESen
dc.subjectELECTRONIC STRUCTUREen
dc.subjectMOLYBDENUM COMPOUNDSen
dc.subjectOPTICAL PROPERTIESen
dc.subjectSEMICONDUCTING TELLURIUM COMPOUNDSen
dc.subjectSINGLE CRYSTALSen
dc.subjectTEMPERATURE DISTRIBUTIONen
dc.subjectENERGY INTERVALen
dc.subjectMETALLIC STATEen
dc.subjectMOLYBDENUM AND TUNGSTENen
dc.subjectRESISTIVITY VALUESen
dc.subjectTEMPERATURE DEPENDENCEen
dc.subjectTEMPERATURE RANGEen
dc.subjectTHEORETICAL CALCULATIONSen
dc.subjectTHREE ORDERS OF MAGNITUDEen
dc.subjectTUNGSTEN COMPOUNDSen
dc.titleElectronic properties of WTe2 and MoTe2 single crystalsen
dc.typeConference Paperen
dc.typeinfo:eu-repo/semantics/conferenceObjecten
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1088/1742-6596/1389/1/012149-
dc.identifier.scopus85076747841-
local.affiliationM.N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.affiliationUral Federal University, Ekaterinburg, 620002, Russian Federation
local.affiliationNational Cheng Kung University, Tainan, 70101, Taiwan
local.contributor.employeeDomozhirova, A.N., M.N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.employeeMakhnev, A.A., M.N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.employeeShreder, E.I., M.N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.employeeNaumov, S.V., M.N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.employeeLukoyanov, A.V., M.N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.employeeChistyakov, V.V., M.N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.employeeHuang, J.C.A., National Cheng Kung University, Tainan, 70101, Taiwan
local.contributor.employeeSemiannikova, A.A., M.N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.employeeKorenistov, P.S., M.N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.employeeMarchenkov, V.V., M.N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.issue1389-
local.volume1-
dc.identifier.wos000562319800149-
local.identifier.pure11764633-
local.description.order12149-
local.identifier.eid2-s2.0-85076747841-
local.fund.rffi17-52-52008-
local.identifier.wosWOS:000562319800149-
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