Peculiarities of the electronic transport in topological materials of Bi2Se3 and MoxW1-xTe2 (x = 0; 0.5; 1)

Chistyakov, V. V.; Domozhirova, A. N.; Huang, J. C. A.; Naumov, S. V.; Marchenkov, V. V.

doi:10.1088/1742-6596/1410/1/012199

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Поле DC	Значение	Язык
dc.contributor.author	Chistyakov, V. V.	en
dc.contributor.author	Domozhirova, A. N.	en
dc.contributor.author	Huang, J. C. A.	en
dc.contributor.author	Naumov, S. V.	en
dc.contributor.author	Marchenkov, V. V.	en
dc.date.accessioned	2020-10-20T16:36:00Z	-
dc.date.available	2020-10-20T16:36:00Z	-
dc.date.issued	2019	-
dc.identifier.citation	Peculiarities of the electronic transport in topological materials of Bi2Se3 and MoxW1-xTe2 (x = 0; 0.5; 1) / V. V. Chistyakov, A. N. Domozhirova, J. C. A. Huang, S. V. Naumov, et al.. — DOI 10.1088/1742-6596/1410/1/012199 // Journal of Physics: Conference Series. — 2019. — Vol. 1. — Iss. 1410. — 12199.	en
dc.identifier.issn	1742-6588	-
dc.identifier.other	https://doi.org/10.1088/1742-6596/1410/1/012199	pdf
dc.identifier.other	1	good_DOI
dc.identifier.other	74417375-2328-44cc-ae5b-335bf672cd0d	pure_uuid
dc.identifier.other	http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85078191802	m
dc.identifier.uri	http://elar.urfu.ru/handle/10995/92493	-
dc.description.abstract	The electrical resistivity of thin films of a topological insulator of Bi2Se3 with a thickness of 10 nm to 75 nm, single crystal of Bi2Se3 with thickness of 0.65 mm and single crystals of topological Weyl semimetals MoxW1-xTe2 (x = 0; 0.5; 1) in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi2Se3 films was observed, i.e. linear dependence of the conductivity of the film on its reciprocal thickness. It is suggested the existence of two different conduction channels in the Mo0.5W0.5Te2 compound. © Published under licence by IOP Publishing Ltd.	en
dc.description.sponsorship	Russian Foundation for Basic Research, RFBR: 17-52-52008	en
dc.description.sponsorship	Government Council on Grants, Russian Federation	en
dc.description.sponsorship	АААА-А18-118020290104-2	en
dc.description.sponsorship	This work was partly supported by the state assignment of Ministry of High Education and Science of Russia (theme “Spin” No. АААА-А18-118020290104-2), by the RFBR (project No. 17-52-52008) and by the Government of the Russian Federation (state contract No. 02.A03.21.0006).	en
dc.format.mimetype	application/pdf	en
dc.language.iso	en	en
dc.publisher	Institute of Physics Publishing	en
dc.rights	info:eu-repo/semantics/openAccess	en
dc.source	Journal of Physics: Conference Series	en
dc.subject	BISMUTH COMPOUNDS	en
dc.subject	ELECTRIC CONDUCTIVITY	en
dc.subject	MOLYBDENUM COMPOUNDS	en
dc.subject	NANOSTRUCTURES	en
dc.subject	OPTOELECTRONIC DEVICES	en
dc.subject	PHOTONICS	en
dc.subject	SELENIUM COMPOUNDS	en
dc.subject	SINGLE CRYSTALS	en
dc.subject	TELLURIUM COMPOUNDS	en
dc.subject	THIN FILMS	en
dc.subject	TOPOLOGICAL INSULATORS	en
dc.subject	TOPOLOGY	en
dc.subject	CONDUCTION CHANNEL	en
dc.subject	ELECTRICAL CONDUCTIVITY	en
dc.subject	ELECTRICAL RESISTIVITY OF THIN FILMS	en
dc.subject	ELECTRONIC TRANSPORT	en
dc.subject	LINEAR DEPENDENCE	en
dc.subject	SIZE EFFECTS	en
dc.subject	TEMPERATURE RANGE	en
dc.subject	TOPOLOGICAL MATERIALS	en
dc.subject	TUNGSTEN COMPOUNDS	en
dc.title	Peculiarities of the electronic transport in topological materials of Bi2Se3 and MoxW1-xTe2 (x = 0; 0.5; 1)	en
dc.type	Conference Paper	en
dc.type	info:eu-repo/semantics/conferenceObject	en
dc.type	info:eu-repo/semantics/publishedVersion	en
dc.identifier.doi	10.1088/1742-6596/1410/1/012199	-
dc.identifier.scopus	85078191802	-
local.affiliation	M.N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.affiliation	National Cheng Kung University, Tainan, 70101, Taiwan
local.affiliation	Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.employee	Chistyakov, V.V., M.N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.employee	Domozhirova, A.N., M.N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.employee	Huang, J.C.A., National Cheng Kung University, Tainan, 70101, Taiwan
local.contributor.employee	Naumov, S.V., M.N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.employee	Marchenkov, V.V., M.N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.issue	1410	-
local.volume	1	-
local.identifier.pure	12001863	-
local.description.order	12199	-
local.identifier.eid	2-s2.0-85078191802	-
local.fund.rffi	17-52-52008	-
Располагается в коллекциях:	Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

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