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dc.contributor.authorTiwari, D.en
dc.contributor.authorSkidchenko, E.en
dc.contributor.authorBowers, J. W.en
dc.contributor.authorYakushev, M. V.en
dc.contributor.authorMartin, R. W.en
dc.contributor.authorFermin, D. J.en
dc.date.accessioned2020-10-20T16:35:49Z-
dc.date.available2020-10-20T16:35:49Z-
dc.date.issued2017-
dc.identifier.citationSpectroscopic and electrical signatures of acceptor states in solution processed Cu2ZnSn(S,Se)4 solar cells / D. Tiwari, E. Skidchenko, J. W. Bowers, M. V. Yakushev, et al.. — DOI 10.1039/c7tc03953k // Journal of Materials Chemistry C. — 2017. — Vol. 48. — Iss. 5. — P. 12720-12727.en
dc.identifier.issn2050-7534-
dc.identifier.otherhttps://pubs.rsc.org/en/content/articlepdf/2017/tc/c7tc03953kpdf
dc.identifier.other1good_DOI
dc.identifier.othera061764d-2f07-4346-9cc8-866f0b46c76cpure_uuid
dc.identifier.otherhttp://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85038586309m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/92452-
dc.description.abstractThe nature and dynamics of acceptor states in solution-processed Cu2ZnSn(S,Se)4 (CZTSSe) thin films are investigated by variable temperature photoluminescence (PL) and electrical impedance spectroscopy. Highly pure I-4 phase CZTSSe with the composition Cu1.6ZnSn0.9(S0.23Se0.77)4 is synthesized by sequentially spin coating of dimethyl-formamide/isopropanol solutions containing metal salts and thiourea onto Mo coated glass, followed by annealing in an Se atmosphere at 540 °C. As-annealed films are highly compact with a thickness of 1.3 μm and grain sizes above 800 nm, with a band gap of 1.18 eV. Photovoltaic devices of 0.25 cm2 with the architecture glass/Mo/CZTSSe/CdS/i-ZnO/Al:ZnO demonstrate a power conversion efficiency reaching up to 5.7% in the absence of an anti-reflective coating. Under AM 1.5G illumination at 296 K, the best device shows a 396 mV open-circuit voltage (VOC), 27.8 mA cm-2 short-circuit current (JSC) and 52% fill factor (FF). The overall dispersion of these parameters is under 15% for a total of 20 devices. In the near IR region, PL spectra are dominated by two broad and asymmetrical bands at 1.14 eV (PL1) and 0.95 eV (PL2) with characteristic power and temperature dependences. Analysis of the device electrical impedance spectra also reveals two electron acceptor states with the same activation energy as those observed by PL. This allows assigning PL1 as a radiative recombination at localized copper vacancies (VCu), while PL2 is associated with CuZn antisites, broadened by potential fluctuations (band tails). The impact of these states on device performance as well as other parameters, such as barrier collection heights introduced by partial selenization of the back contact, are discussed. © 2017 The Royal Society of Chemistry.en
dc.description.sponsorshipEngineering and Physical Sciences Research Council, EPSRC: EP/L017792/1en
dc.description.sponsorshipInstitute of Advanced Studies, University of Bristol, IAS: EP/K035746/1en
dc.description.sponsorshipDT, JWB and DJF are indebted to the Engineering and Physical Sciences Research Council (EPSRC) funded PVTEAM grant (EP/L017792/1). DJF acknowledges Institute of Advanced Studies of the University of Bristol support of a University Research Fellowship 2016. Impedance analysis was performed with a Solartron analyzer procured under EPSRC CDT Capital grant EP/K035746/1. Microscopic imaging and analysis were done at the Chemical Imaging Facility, University of Bristol, with equipment funded by EPSRC Grant ‘‘Atoms to Applications’’ (EP/K035746/1). The authors are grateful for measurement facilities provided at CREST, Loughborough University and the Department of Physics, SUPA, Strathclyde University.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherRoyal Society of Chemistryen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceJournal of Materials Chemistry Cen
dc.subjectACTIVATION ANALYSISen
dc.subjectACTIVATION ENERGYen
dc.subjectANTIREFLECTION COATINGSen
dc.subjectCOATINGSen
dc.subjectCOPPER ALLOYSen
dc.subjectCOPPER COMPOUNDSen
dc.subjectELECTRIC IMPEDANCEen
dc.subjectELECTRIC IMPEDANCE MEASUREMENTen
dc.subjectENERGY GAPen
dc.subjectGLASSen
dc.subjectMOLYBDENUMen
dc.subjectOPEN CIRCUIT VOLTAGEen
dc.subjectREFLECTIVE COATINGSen
dc.subjectSEMICONDUCTING SELENIUM COMPOUNDSen
dc.subjectSOLAR CELLSen
dc.subjectSPIN GLASSen
dc.subjectTEMPERATURE DISTRIBUTIONen
dc.subjectTIN COMPOUNDSen
dc.subjectZINC ALLOYSen
dc.subjectZINC COMPOUNDSen
dc.subjectANTI REFLECTIVE COATINGSen
dc.subjectELECTRICAL IMPEDANCEen
dc.subjectELECTRICAL IMPEDANCE SPECTROSCOPYen
dc.subjectELECTRICAL SIGNATURESen
dc.subjectPOTENTIAL FLUCTUATIONSen
dc.subjectPOWER CONVERSION EFFICIENCIESen
dc.subjectRADIATIVE RECOMBINATIONen
dc.subjectTEMPERATURE DEPENDENCEen
dc.subjectSELENIUM COMPOUNDSen
dc.titleSpectroscopic and electrical signatures of acceptor states in solution processed Cu2ZnSn(S,Se)4 solar cellsen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1039/c7tc03953k-
dc.identifier.scopus85038586309-
local.affiliationSchool of Chemistry, University of Bristol, Bristol, BS8 1TS, United Kingdom
local.affiliationDepartment of Physics, SUPA, Strathclyde University, Glasgow, G4 0NG, United Kingdom
local.affiliationCentre for Renewable Energy Systems Technology (CREST), Wolfson School of Mechanical, Electrical and Manufacturing Engineering, Loughborough University, Loughborough, LE11 3TU, United Kingdom
local.affiliationInstitute of Metal Physics, UB RAS, S. Kovalevskaya Street 18, Ekaterinburg, 620990, Russian Federation
local.affiliationUral Federal University, Mira 19, Ekaterinburg, 620002, Russian Federation
local.affiliationSkolkovo Institute of Science and Technology, Skolkovo Innovation Center, Nobelya str., Moscow, 143026, Russian Federation
local.contributor.employeeTiwari, D., School of Chemistry, University of Bristol, Bristol, BS8 1TS, United Kingdom
local.contributor.employeeSkidchenko, E., Department of Physics, SUPA, Strathclyde University, Glasgow, G4 0NG, United Kingdom, Skolkovo Institute of Science and Technology, Skolkovo Innovation Center, Nobelya str., Moscow, 143026, Russian Federation
local.contributor.employeeBowers, J.W., Centre for Renewable Energy Systems Technology (CREST), Wolfson School of Mechanical, Electrical and Manufacturing Engineering, Loughborough University, Loughborough, LE11 3TU, United Kingdom
local.contributor.employeeYakushev, M.V., Department of Physics, SUPA, Strathclyde University, Glasgow, G4 0NG, United Kingdom, Institute of Metal Physics, UB RAS, S. Kovalevskaya Street 18, Ekaterinburg, 620990, Russian Federation, Ural Federal University, Mira 19, Ekaterinburg, 620002, Russian Federation
local.contributor.employeeMartin, R.W., Department of Physics, SUPA, Strathclyde University, Glasgow, G4 0NG, United Kingdom
local.contributor.employeeFermin, D.J., School of Chemistry, University of Bristol, Bristol, BS8 1TS, United Kingdom
local.description.firstpage12720-
local.description.lastpage12727-
local.issue5-
local.volume48-
dc.identifier.wos000418069700008-
local.identifier.pure6228038-
local.identifier.eid2-s2.0-85038586309-
local.identifier.wosWOS:000418069700008-
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