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Поле DC | Значение | Язык |
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dc.contributor.author | Tiwari, D. | en |
dc.contributor.author | Skidchenko, E. | en |
dc.contributor.author | Bowers, J. W. | en |
dc.contributor.author | Yakushev, M. V. | en |
dc.contributor.author | Martin, R. W. | en |
dc.contributor.author | Fermin, D. J. | en |
dc.date.accessioned | 2020-10-20T16:35:49Z | - |
dc.date.available | 2020-10-20T16:35:49Z | - |
dc.date.issued | 2017 | - |
dc.identifier.citation | Spectroscopic and electrical signatures of acceptor states in solution processed Cu2ZnSn(S,Se)4 solar cells / D. Tiwari, E. Skidchenko, J. W. Bowers, M. V. Yakushev, et al.. — DOI 10.1039/c7tc03953k // Journal of Materials Chemistry C. — 2017. — Vol. 48. — Iss. 5. — P. 12720-12727. | en |
dc.identifier.issn | 2050-7534 | - |
dc.identifier.other | https://pubs.rsc.org/en/content/articlepdf/2017/tc/c7tc03953k | |
dc.identifier.other | 1 | good_DOI |
dc.identifier.other | a061764d-2f07-4346-9cc8-866f0b46c76c | pure_uuid |
dc.identifier.other | http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85038586309 | m |
dc.identifier.uri | http://elar.urfu.ru/handle/10995/92452 | - |
dc.description.abstract | The nature and dynamics of acceptor states in solution-processed Cu2ZnSn(S,Se)4 (CZTSSe) thin films are investigated by variable temperature photoluminescence (PL) and electrical impedance spectroscopy. Highly pure I-4 phase CZTSSe with the composition Cu1.6ZnSn0.9(S0.23Se0.77)4 is synthesized by sequentially spin coating of dimethyl-formamide/isopropanol solutions containing metal salts and thiourea onto Mo coated glass, followed by annealing in an Se atmosphere at 540 °C. As-annealed films are highly compact with a thickness of 1.3 μm and grain sizes above 800 nm, with a band gap of 1.18 eV. Photovoltaic devices of 0.25 cm2 with the architecture glass/Mo/CZTSSe/CdS/i-ZnO/Al:ZnO demonstrate a power conversion efficiency reaching up to 5.7% in the absence of an anti-reflective coating. Under AM 1.5G illumination at 296 K, the best device shows a 396 mV open-circuit voltage (VOC), 27.8 mA cm-2 short-circuit current (JSC) and 52% fill factor (FF). The overall dispersion of these parameters is under 15% for a total of 20 devices. In the near IR region, PL spectra are dominated by two broad and asymmetrical bands at 1.14 eV (PL1) and 0.95 eV (PL2) with characteristic power and temperature dependences. Analysis of the device electrical impedance spectra also reveals two electron acceptor states with the same activation energy as those observed by PL. This allows assigning PL1 as a radiative recombination at localized copper vacancies (VCu), while PL2 is associated with CuZn antisites, broadened by potential fluctuations (band tails). The impact of these states on device performance as well as other parameters, such as barrier collection heights introduced by partial selenization of the back contact, are discussed. © 2017 The Royal Society of Chemistry. | en |
dc.description.sponsorship | Engineering and Physical Sciences Research Council, EPSRC: EP/L017792/1 | en |
dc.description.sponsorship | Institute of Advanced Studies, University of Bristol, IAS: EP/K035746/1 | en |
dc.description.sponsorship | DT, JWB and DJF are indebted to the Engineering and Physical Sciences Research Council (EPSRC) funded PVTEAM grant (EP/L017792/1). DJF acknowledges Institute of Advanced Studies of the University of Bristol support of a University Research Fellowship 2016. Impedance analysis was performed with a Solartron analyzer procured under EPSRC CDT Capital grant EP/K035746/1. Microscopic imaging and analysis were done at the Chemical Imaging Facility, University of Bristol, with equipment funded by EPSRC Grant ‘‘Atoms to Applications’’ (EP/K035746/1). The authors are grateful for measurement facilities provided at CREST, Loughborough University and the Department of Physics, SUPA, Strathclyde University. | en |
dc.format.mimetype | application/pdf | en |
dc.language.iso | en | en |
dc.publisher | Royal Society of Chemistry | en |
dc.rights | info:eu-repo/semantics/openAccess | en |
dc.source | Journal of Materials Chemistry C | en |
dc.subject | ACTIVATION ANALYSIS | en |
dc.subject | ACTIVATION ENERGY | en |
dc.subject | ANTIREFLECTION COATINGS | en |
dc.subject | COATINGS | en |
dc.subject | COPPER ALLOYS | en |
dc.subject | COPPER COMPOUNDS | en |
dc.subject | ELECTRIC IMPEDANCE | en |
dc.subject | ELECTRIC IMPEDANCE MEASUREMENT | en |
dc.subject | ENERGY GAP | en |
dc.subject | GLASS | en |
dc.subject | MOLYBDENUM | en |
dc.subject | OPEN CIRCUIT VOLTAGE | en |
dc.subject | REFLECTIVE COATINGS | en |
dc.subject | SEMICONDUCTING SELENIUM COMPOUNDS | en |
dc.subject | SOLAR CELLS | en |
dc.subject | SPIN GLASS | en |
dc.subject | TEMPERATURE DISTRIBUTION | en |
dc.subject | TIN COMPOUNDS | en |
dc.subject | ZINC ALLOYS | en |
dc.subject | ZINC COMPOUNDS | en |
dc.subject | ANTI REFLECTIVE COATINGS | en |
dc.subject | ELECTRICAL IMPEDANCE | en |
dc.subject | ELECTRICAL IMPEDANCE SPECTROSCOPY | en |
dc.subject | ELECTRICAL SIGNATURES | en |
dc.subject | POTENTIAL FLUCTUATIONS | en |
dc.subject | POWER CONVERSION EFFICIENCIES | en |
dc.subject | RADIATIVE RECOMBINATION | en |
dc.subject | TEMPERATURE DEPENDENCE | en |
dc.subject | SELENIUM COMPOUNDS | en |
dc.title | Spectroscopic and electrical signatures of acceptor states in solution processed Cu2ZnSn(S,Se)4 solar cells | en |
dc.type | Article | en |
dc.type | info:eu-repo/semantics/article | en |
dc.type | info:eu-repo/semantics/publishedVersion | en |
dc.identifier.doi | 10.1039/c7tc03953k | - |
dc.identifier.scopus | 85038586309 | - |
local.affiliation | School of Chemistry, University of Bristol, Bristol, BS8 1TS, United Kingdom | |
local.affiliation | Department of Physics, SUPA, Strathclyde University, Glasgow, G4 0NG, United Kingdom | |
local.affiliation | Centre for Renewable Energy Systems Technology (CREST), Wolfson School of Mechanical, Electrical and Manufacturing Engineering, Loughborough University, Loughborough, LE11 3TU, United Kingdom | |
local.affiliation | Institute of Metal Physics, UB RAS, S. Kovalevskaya Street 18, Ekaterinburg, 620990, Russian Federation | |
local.affiliation | Ural Federal University, Mira 19, Ekaterinburg, 620002, Russian Federation | |
local.affiliation | Skolkovo Institute of Science and Technology, Skolkovo Innovation Center, Nobelya str., Moscow, 143026, Russian Federation | |
local.contributor.employee | Tiwari, D., School of Chemistry, University of Bristol, Bristol, BS8 1TS, United Kingdom | |
local.contributor.employee | Skidchenko, E., Department of Physics, SUPA, Strathclyde University, Glasgow, G4 0NG, United Kingdom, Skolkovo Institute of Science and Technology, Skolkovo Innovation Center, Nobelya str., Moscow, 143026, Russian Federation | |
local.contributor.employee | Bowers, J.W., Centre for Renewable Energy Systems Technology (CREST), Wolfson School of Mechanical, Electrical and Manufacturing Engineering, Loughborough University, Loughborough, LE11 3TU, United Kingdom | |
local.contributor.employee | Yakushev, M.V., Department of Physics, SUPA, Strathclyde University, Glasgow, G4 0NG, United Kingdom, Institute of Metal Physics, UB RAS, S. Kovalevskaya Street 18, Ekaterinburg, 620990, Russian Federation, Ural Federal University, Mira 19, Ekaterinburg, 620002, Russian Federation | |
local.contributor.employee | Martin, R.W., Department of Physics, SUPA, Strathclyde University, Glasgow, G4 0NG, United Kingdom | |
local.contributor.employee | Fermin, D.J., School of Chemistry, University of Bristol, Bristol, BS8 1TS, United Kingdom | |
local.description.firstpage | 12720 | - |
local.description.lastpage | 12727 | - |
local.issue | 5 | - |
local.volume | 48 | - |
dc.identifier.wos | 000418069700008 | - |
local.identifier.pure | 6228038 | - |
local.identifier.eid | 2-s2.0-85038586309 | - |
local.identifier.wos | WOS:000418069700008 | - |
Располагается в коллекциях: | Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC |
Файлы этого ресурса:
Файл | Описание | Размер | Формат | |
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10.1039-c7tc03953k.pdf | 3,9 MB | Adobe PDF | Просмотреть/Открыть |
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