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dc.contributor.authorGusev, A.en
dc.contributor.authorLyubutin, S.en
dc.contributor.authorPatrakov, V.en
dc.contributor.authorRukin, S.en
dc.contributor.authorSlovikovsky, B.en
dc.contributor.authorBarnes, M. J.en
dc.contributor.authorKramer, T.en
dc.contributor.authorSenaj, V.en
dc.date.accessioned2020-10-20T16:35:49Z-
dc.date.available2020-10-20T16:35:49Z-
dc.date.issued2019-
dc.identifier.citationFast high-power thyristors triggered in impact-ionization wave mode / A. Gusev, S. Lyubutin, V. Patrakov, S. Rukin, et al.. — DOI 10.1088/1748-0221/14/10/P10006 // Journal of Instrumentation. — 2019. — Vol. 9. — Iss. 14. — P10006.en
dc.identifier.issn1748-0221-
dc.identifier.otherhttps://doi.org/10.1088/1748-0221/14/10/p10006pdf
dc.identifier.other1good_DOI
dc.identifier.other3f1d9cce-44f0-4f78-864d-52fb63a51909pure_uuid
dc.identifier.otherhttp://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85077216980m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/92449-
dc.description.abstractGTO-like thyristors 5STH-2045H0002 (4.5 kV, 18 kA/µs) developed by ABB semiconductors are currently used at CERN in LHC Beam Dumping System (LBDS): high-power switches with high dI/dt capability and low turn-on delay time are required. Implementation of the impact-ionization triggering in GTO-like thyristor enhances its switching performance and gives new information about semiconductor physics. In this work thyristors of 5STH-2045H0002 type triggered in impact-ionization wave mode are investigated. A semiconductor opening switch (SOS) generator providing a dV/dt of several kV/ns was used as a source of triggering pulses. A thyristor switching time of approximately 200-300 ps was observed. Maximum discharge parameters were obtained for two series connected thyristors at a charging voltage of 10 kV, and a capacitor stored energy of 300 J: peak current of 43 kA, dI/dt of 120 kA/µs (limited by the discharge circuit), Full Width at Half Maximum (FWHM) of 1.5 µs. A single thyristor was tested in the repetitive mode at the charging voltage of 4.2 kV, and the stored energy of 18 J: peak current of 5.5 kA, dI/dt of 40 kA/µs, FWHM of 1.5 µs were obtained. No thyristor degradation was observed after more than one million pulses at a PRF up to 1 kHz in burst mode. Thyristor recovery time was 250 µs. The switching efficiency was up to 98% depending on dV/dt and stored energy. © 2019 CERN.en
dc.description.sponsorshipRussian Foundation for Basic Research, RFBR: 17-08-00406, 18-08-01390en
dc.description.sponsorshipRussian Academy of Sciences, RAS: 10.en
dc.description.sponsorshipThe work was supported by RFBR Grants Nos. 17-08-00406 and 18-08-01390, and by RAS Program Project No. 10. The study in part was carried out on the equipment of the Collective use centre at the Institute of Electrophysics, Ural Branch, Russian Academy of Sciences.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherInstitute of Physics Publishingen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceJournal of Instrumentationen
dc.subjectACCELERATOR SUBSYSTEMS AND TECHNOLOGIESen
dc.subjectINSTRUMENTATION FOR PARTICLE ACCELERATORSen
dc.subjectPULSED POWERen
dc.subjectSTORAGE RINGS - HIGH ENERGY (LINEAR ACCELERATORS, SYNCHROTRONS)en
dc.subjectFULL WIDTH AT HALF MAXIMUMen
dc.subjectSEMICONDUCTOR SWITCHESen
dc.subjectTHYRISTORSen
dc.subjectTIME SWITCHESen
dc.subjectDISCHARGE CIRCUITSen
dc.subjectDISCHARGE PARAMETERSen
dc.subjectPULSED-POWERen
dc.subjectSEMICONDUCTOR OPENING SWITCHen
dc.subjectSEMICONDUCTOR PHYSICSen
dc.subjectSERIES-CONNECTED THYRISTORSen
dc.subjectSWITCHING EFFICIENCYen
dc.subjectSWITCHING PERFORMANCEen
dc.subjectIMPACT IONIZATIONen
dc.titleFast high-power thyristors triggered in impact-ionization wave modeen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1088/1748-0221/14/10/P10006-
dc.identifier.scopus85077216980-
local.affiliationInstitute of Electrophysics, UB RAS, 106 Amundsen Street, Yekaterinburg, Russian Federation
local.affiliationUral Federal University, 19 Mira Street, Yekaterinburg, Russian Federation
local.affiliationCERN, Geneve 23, CH-1211, Switzerland
local.contributor.employeeGusev, A., Institute of Electrophysics, UB RAS, 106 Amundsen Street, Yekaterinburg, Russian Federation, Ural Federal University, 19 Mira Street, Yekaterinburg, Russian Federation
local.contributor.employeeLyubutin, S., Institute of Electrophysics, UB RAS, 106 Amundsen Street, Yekaterinburg, Russian Federation
local.contributor.employeePatrakov, V., Institute of Electrophysics, UB RAS, 106 Amundsen Street, Yekaterinburg, Russian Federation, Ural Federal University, 19 Mira Street, Yekaterinburg, Russian Federation
local.contributor.employeeRukin, S., Institute of Electrophysics, UB RAS, 106 Amundsen Street, Yekaterinburg, Russian Federation
local.contributor.employeeSlovikovsky, B., Institute of Electrophysics, UB RAS, 106 Amundsen Street, Yekaterinburg, Russian Federation
local.contributor.employeeBarnes, M.J., CERN, Geneve 23, CH-1211, Switzerland
local.contributor.employeeKramer, T., CERN, Geneve 23, CH-1211, Switzerland
local.contributor.employeeSenaj, V., CERN, Geneve 23, CH-1211, Switzerland
local.issue14-
local.volume9-
dc.identifier.wos000501798100006-
local.identifier.pure11751594-
local.description.orderP10006-
local.identifier.eid2-s2.0-85077216980-
local.fund.rffi17-08-00406, 1-
local.fund.rffi8-08-01390-
local.identifier.wosWOS:000501798100006-
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