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dc.contributor.authorZubar, T.en
dc.contributor.authorFedosyuk, V.en
dc.contributor.authorTishkevich, D.en
dc.contributor.authorKanafyev, O.en
dc.contributor.authorAstapovich, K.en
dc.contributor.authorKozlovskiy, A.en
dc.contributor.authorZdorovets, M.en
dc.contributor.authorVinnik, D.en
dc.contributor.authorGudkova, S.en
dc.contributor.authorKaniukov, E.en
dc.contributor.authorSombra, A. S. B.en
dc.contributor.authorZhou, D.en
dc.contributor.authorJotania, R. B.en
dc.contributor.authorSingh, C.en
dc.contributor.authorTrukhanov, S.en
dc.contributor.authorTrukhanov, A.en
dc.date.accessioned2020-09-29T09:47:57Z-
dc.date.available2020-09-29T09:47:57Z-
dc.date.issued2020-
dc.identifier.citationThe effect of heat treatment on the microstructure and mechanical properties of 2d nanostructured au/nife system / T. Zubar, V. Fedosyuk, D. Tishkevich, O. Kanafyev, et al. . — DOI 10.3390/nano10061077 // Nanomaterials. — 2020. — Vol. 6. — Iss. 10. — 1077.en
dc.identifier.issn2079-4991-
dc.identifier.otherhttps://www.mdpi.com/2079-4991/10/6/1077/pdfpdf
dc.identifier.other1good_DOI
dc.identifier.other052b571a-ac18-4fe3-ba80-829e4361ee6dpure_uuid
dc.identifier.otherhttp://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85085889623m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/90578-
dc.description.abstractNanostructured NiFe film was obtained on silicon with a thin gold sublayer via pulsed electrodeposition and annealed at a temperature from 100 to 400◦C in order to study the effect of heat treatment on the surface microstructure and mechanical properties. High-resolution atomic force microscopy made it possible to trace stepwise evolving microstructure under the influence of heat treatment. It was found that NiFe film grains undergo coalescence twice—at ~100 and ~300°C—in the process of a gradual increase in grain size. The mechanical properties of the Au/NiFe nanostructured system have been investigated by nanoindentation at two various indentation depths, 10 and 50 nm. The results showed the opposite effect of heat treatment on the mechanical properties in the near-surface layer and in the material volume. Surface homogenization in combination with oxidation activation leads to abnormal strengthening and hardening-up of the near-surface layer. At the same time, a nonlinear decrease in hardness and Young’s modulus with increasing temperature of heat treatment characterizes the internal volume of nanostructured NiFe. An explanation of this phenomenon was found in the complex effect of changing the ratio of grain volume/grain boundaries and increasing the concentration of thermally activated diffuse gold atoms from the sublayer to the NiFe film. © 2020 by the authors. Licensee MDPI, Basel, Switzerland.en
dc.description.sponsorshipFunding: The work was supported by Act 211 Government of the Russian Federation, contract № 02.A03.21.0011.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherMDPI AGen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.rightscc-byother
dc.sourceNanomaterialsen
dc.subjectELASTOPLASTIC DEFORMATIONen
dc.subjectHEAT TREATMENTen
dc.subjectMULTILAYER SYSTEMen
dc.subjectNANOHARDNESSen
dc.subjectNIFE NANOGRAINSen
dc.subjectPULSED ELECTRODEPOSITIONen
dc.subjectSURFACE MICROSTRUCTUREen
dc.subjectYOUNG’S MODULUSen
dc.titleThe effect of heat treatment on the microstructure and mechanical properties of 2d nanostructured au/nife systemen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.3390/nano10061077-
dc.identifier.scopus85085889623-
local.affiliationLaboratory of Magnetic Films Physics, Scientific-Practical Materials Research Centre of National Academy of Sciences of Belarus, Minsk, 220072, Belarusen
local.affiliationLaboratory of Single Crystal Growth, South Ural State University, Chelyabinsk, 454080, Russian Federationen
local.affiliationThe Institute of Nuclear Physics, Almaty, 050032, Kazakhstanen
local.affiliationEngineering Profile Laboratory, L.N. Gumilyov, Eurasian National University, Nur-Sultan, 010008, Kazakhstanen
local.affiliationDepartment of Intelligent Information Technologies, Ural Federal University named after the First President of Russia B.N. Yeltsin, Yekaterinburg, 620075, Russian Federationen
local.affiliationSEC “Nanotechnology”, Moscow Institute of Physics and Technology (State University), Dolgoprudny, 141701, Russian Federationen
local.affiliationDepartment of Physics, Federal University of Ceara, Fortaleza, 60-455-970, Brazilen
local.affiliationElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an, 710049, Chinaen
local.affiliationDepartment of Physics, Electronics and Space Science, Gujarat University, Ahmedabad, 380009, Indiaen
local.affiliationSchool of Electronics and Electrical Engineering, Lovely Professional University, Phagwara, 144411, Indiaen
local.affiliationDepartment of Technology of Electronics Materials, National University of Science and Technology MISiS, Leninsky Prospekt, 4, Moscow, 119049, Russian Federationen
local.contributor.employeeZubar, T., Laboratory of Magnetic Films Physics, Scientific-Practical Materials Research Centre of National Academy of Sciences of Belarus, Minsk, 220072, Belarus, Laboratory of Single Crystal Growth, South Ural State University, Chelyabinsk, 454080, Russian Federationru
local.contributor.employeeFedosyuk, V., Laboratory of Magnetic Films Physics, Scientific-Practical Materials Research Centre of National Academy of Sciences of Belarus, Minsk, 220072, Belarusru
local.contributor.employeeTishkevich, D., Laboratory of Magnetic Films Physics, Scientific-Practical Materials Research Centre of National Academy of Sciences of Belarus, Minsk, 220072, Belarus, Laboratory of Single Crystal Growth, South Ural State University, Chelyabinsk, 454080, Russian Federationru
local.contributor.employeeKanafyev, O., Laboratory of Magnetic Films Physics, Scientific-Practical Materials Research Centre of National Academy of Sciences of Belarus, Minsk, 220072, Belarusru
local.contributor.employeeAstapovich, K., Laboratory of Magnetic Films Physics, Scientific-Practical Materials Research Centre of National Academy of Sciences of Belarus, Minsk, 220072, Belarusru
local.contributor.employeeKozlovskiy, A., The Institute of Nuclear Physics, Almaty, 050032, Kazakhstanru
local.contributor.employeeZdorovets, M., The Institute of Nuclear Physics, Almaty, 050032, Kazakhstan, Engineering Profile Laboratory, L.N. Gumilyov, Eurasian National University, Nur-Sultan, 010008, Kazakhstan, Department of Intelligent Information Technologies, Ural Federal University named after the First President of Russia B.N. Yeltsin, Yekaterinburg, 620075, Russian Federationru
local.contributor.employeeVinnik, D., Laboratory of Single Crystal Growth, South Ural State University, Chelyabinsk, 454080, Russian Federationru
local.contributor.employeeGudkova, S., Laboratory of Single Crystal Growth, South Ural State University, Chelyabinsk, 454080, Russian Federation, SEC “Nanotechnology”, Moscow Institute of Physics and Technology (State University), Dolgoprudny, 141701, Russian Federationru
local.contributor.employeeKaniukov, E., Laboratory of Single Crystal Growth, South Ural State University, Chelyabinsk, 454080, Russian Federationru
local.contributor.employeeSombra, A.S.B., Department of Physics, Federal University of Ceara, Fortaleza, 60-455-970, Brazilru
local.contributor.employeeZhou, D., Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an, 710049, Chinaru
local.contributor.employeeJotania, R.B., Department of Physics, Electronics and Space Science, Gujarat University, Ahmedabad, 380009, Indiaru
local.contributor.employeeSingh, C., School of Electronics and Electrical Engineering, Lovely Professional University, Phagwara, 144411, Indiaru
local.contributor.employeeTrukhanov, S., Laboratory of Magnetic Films Physics, Scientific-Practical Materials Research Centre of National Academy of Sciences of Belarus, Minsk, 220072, Belarus, Laboratory of Single Crystal Growth, South Ural State University, Chelyabinsk, 454080, Russian Federationru
local.contributor.employeeTrukhanov, A., Laboratory of Magnetic Films Physics, Scientific-Practical Materials Research Centre of National Academy of Sciences of Belarus, Minsk, 220072, Belarus, Laboratory of Single Crystal Growth, South Ural State University, Chelyabinsk, 454080, Russian Federation, Department of Technology of Electronics Materials, National University of Science and Technology MISiS, Leninsky Prospekt, 4, Moscow, 119049, Russian Federationru
local.issue10-
local.volume6-
dc.identifier.wos000551001300001-
local.identifier.pure13159046-
local.description.order1077-
local.identifier.eid2-s2.0-85085889623-
local.identifier.wosWOS:000551001300001-
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