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dc.contributor.authorBoukhvalov, D. W.en
dc.contributor.authorEdla, R.en
dc.contributor.authorCupolillo, A.en
dc.contributor.authorFabio, V.en
dc.contributor.authorSankar, R.en
dc.contributor.authorZhu, Y.en
dc.contributor.authorMao, Z.en
dc.contributor.authorHu, J.en
dc.contributor.authorTorelli, P.en
dc.contributor.authorChiarello, G.en
dc.contributor.authorOttaviano, L.en
dc.contributor.authorPolitano, A.en
dc.date.accessioned2020-09-29T09:46:05Z-
dc.date.available2020-09-29T09:46:05Z-
dc.date.issued2019-
dc.identifier.citationSurface Instability and Chemical Reactivity of ZrSiS and ZrSiSe Nodal-Line Semimetals / D. W. Boukhvalov, R. Edla, A. Cupolillo, V. Fabio, et al. . — DOI 10.1002/adfm.201900438 // Advanced Functional Materials. — 2019. — Vol. 18. — Iss. 29. — 1900438.en
dc.identifier.issn1616-301X-
dc.identifier.otherhttps://rss.onlinelibrary.wiley.com/doi/am-pdf/10.1002/adfm.201900438pdf
dc.identifier.other1good_DOI
dc.identifier.other294e5d4b-cc87-4ca3-86bb-f9862a17d530pure_uuid
dc.identifier.otherhttp://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85062769060m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/90119-
dc.description.abstractMaterials exhibiting nodal-line fermions promise superb impact on technology for the prospect of dissipationless spintronic devices. Among nodal-line semimetals, the ZrSiX (X = S, Se, Te) class is the most suitable candidate for such applications. However, the surface chemical reactivity of ZrSiS and ZrSiSe has not been explored yet. Here, by combining different surface-science tools and density functional theory, it is demonstrated that the formation of ZrSiS and ZrSiSe surfaces by cleavage is accompanied by the washing up of the exotic topological bands, giving rise to the nodal line. Moreover, while the ZrSiS has a termination layer with both Zr and S atoms, in the ZrSiSe surface, reconstruction occurs with the appearance of Si surface atoms, which is particularly prone to oxidation. It is demonstrated that the chemical activity of ZrSiX compounds is mostly determined by the interaction of the Si layer with the ZrX sublayer. A suitable encapsulation for ZrSiX should not only preserve their surfaces from interaction with oxidative species, but also provide a saturation of dangling bonds with minimal distortion of the surface. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen
dc.description.sponsorshipU.S. Department of Energy, USDOE: DE-SC0014208en
dc.description.sponsorshipA.P. thanks Elettra Sincrotrone Trieste S.C.p.A. for financial support. Z.M. thanks the support by the U.S. Department of Energy under grant DE-SC0014208 for material synthesis. This work was partly performed in the framework of the Nanoscience Foundry and Fine Analysis facility (NFFA-MIUR Italy Progetti Internazionali).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherWiley-VCH Verlagen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.rightspublisher-specific, author manuscript: http://onlinelibrary.wiley.com/termsAndConditions#amother
dc.sourceAdvanced Functional Materialsen
dc.subjectDENSITY FUNCTIONAL THEORYen
dc.subjectSURFACE SCIENCEen
dc.subjectTOPOLOGICAL MATERIALSen
dc.subjectVIBRATIONAL SPECTROSCOPYen
dc.subjectX-RAY PHOTOELECTRON SPECTROSCOPYen
dc.subjectDANGLING BONDSen
dc.subjectDENSITY FUNCTIONAL THEORYen
dc.subjectSILICONen
dc.subjectTOPOLOGYen
dc.subjectVIBRATIONAL SPECTROSCOPYen
dc.subjectX RAY PHOTOELECTRON SPECTROSCOPYen
dc.subjectCHEMICAL ACTIVITIESen
dc.subjectMINIMAL DISTORTIONen
dc.subjectSPINTRONIC DEVICEen
dc.subjectSURFACE CHEMICAL REACTIVITYen
dc.subjectSURFACE INSTABILITYen
dc.subjectSURFACE SCIENCEen
dc.subjectTOPOLOGICAL BANDSen
dc.subjectTOPOLOGICAL MATERIALSen
dc.subjectSELENIUM COMPOUNDSen
dc.titleSurface Instability and Chemical Reactivity of ZrSiS and ZrSiSe Nodal-Line Semimetalsen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/acceptedVersionen
dc.identifier.doi10.1002/adfm.201900438-
dc.identifier.scopus85062769060-
local.affiliationCollege of Science, Institute of Materials Physics and Chemistry, Nanjing Forestry University, Nanjing, 210037, Chinaen
local.affiliationTheoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, Ekaterinburg, 620002, Russian Federationen
local.affiliationConsiglio Nazionale delle Ricerche (CNR)—Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science Park, S.S. 14 km 163.5, Trieste, 34149, Italyen
local.affiliationDipartimento di Fisica, Università della Calabria, via ponte Bucci cubo 31/C, Rende, Cosenza 87036, Italyen
local.affiliationInstitute of Physics, Academia Sinica, Nankang, Taipei, 11529, Taiwanen
local.affiliationCenter for Condensed Matter Sciences, National Taiwan University, Taipei, 10617, Taiwanen
local.affiliationDepartment of Physics, Pennsylvania State University, 104 Davey Lab University ParkPA 16802-6300, United Statesen
local.affiliationDepartment of Physics, Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, United Statesen
local.affiliationDipartimento di Scienze Fisiche e Chimiche, Università dell'Aquila, Via Vetoio 10, L'Aquila, I-67100, Italyen
local.contributor.employeeBoukhvalov, D.W., College of Science, Institute of Materials Physics and Chemistry, Nanjing Forestry University, Nanjing, 210037, China, Theoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, Ekaterinburg, 620002, Russian Federationru
local.contributor.employeeEdla, R., Consiglio Nazionale delle Ricerche (CNR)—Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science Park, S.S. 14 km 163.5, Trieste, 34149, Italyru
local.contributor.employeeCupolillo, A., Dipartimento di Fisica, Università della Calabria, via ponte Bucci cubo 31/C, Rende, Cosenza 87036, Italyru
local.contributor.employeeFabio, V., Dipartimento di Fisica, Università della Calabria, via ponte Bucci cubo 31/C, Rende, Cosenza 87036, Italyru
local.contributor.employeeSankar, R., Institute of Physics, Academia Sinica, Nankang, Taipei, 11529, Taiwan, Center for Condensed Matter Sciences, National Taiwan University, Taipei, 10617, Taiwanru
local.contributor.employeeZhu, Y., Department of Physics, Pennsylvania State University, 104 Davey Lab University ParkPA 16802-6300, United Statesru
local.contributor.employeeMao, Z., Department of Physics, Pennsylvania State University, 104 Davey Lab University ParkPA 16802-6300, United Statesru
local.contributor.employeeHu, J., Department of Physics, Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, United Statesru
local.contributor.employeeTorelli, P., Consiglio Nazionale delle Ricerche (CNR)—Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science Park, S.S. 14 km 163.5, Trieste, 34149, Italyru
local.contributor.employeeChiarello, G., Dipartimento di Fisica, Università della Calabria, via ponte Bucci cubo 31/C, Rende, Cosenza 87036, Italyru
local.contributor.employeeOttaviano, L., Dipartimento di Scienze Fisiche e Chimiche, Università dell'Aquila, Via Vetoio 10, L'Aquila, I-67100, Italyru
local.contributor.employeePolitano, A., Dipartimento di Scienze Fisiche e Chimiche, Università dell'Aquila, Via Vetoio 10, L'Aquila, I-67100, Italyru
local.issue29-
local.volume18-
dc.identifier.wos000471330500023-
local.identifier.pure9813951-
local.description.order1900438-
local.identifier.eid2-s2.0-85062769060-
local.identifier.wosWOS:000471330500023-
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