Термостабильность атомных и электронных структур при формировании интерфейсов графена и силицена на подложках металлов

Abstract

Analyzing MD simulation data on the thermic evolution of G/M, Si/M interface there are have been established the specificities and criteria of functional stability of atomic, electron (conserving Dirac cone) structures, as main condition of exelant electronic properties (superconductivity including).