Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/75506
Title: Electrical and optical properties of a PtSn 4 single crystal
Authors: Marchenkov, V. V.
Domozhirova, A. N.
Semiannikova, A. A.
Makhnev, A. A.
Shreder, E. I.
Naumov, S. V.
Chistyakov, V. V.
Patrakov, E. I.
Perevozchikova, Yu. A.
Marchenkova, E. B.
Huang, J. C. A.
Eisterer, M.
Issue Date: 2019
Publisher: Institute of Physics Publishing
Citation: Electrical and optical properties of a PtSn 4 single crystal / V. V. Marchenkov, A. N. Domozhirova, A. A. Semiannikova et al. // Journal of Physics: Conference Series. — 2019. — Vol. 1199. — Iss. 1. — 12037.
Abstract: A topological semimetal PtSn4 single crystal was grown by method of crystallization from a solution in a melt. Then the electrical resistivity and galvanomagnetic properties (magnetoresistivity and the Hall effect) were studied in the temperature range from 4.2 to 80 K and in magnetic fields up to 100 kOe. The optical measurements were carried out at room temperature. The residual resistivity is shown to be low enough and amount to ∼ 0.5 μOhm•cm. The temperature dependence of the electrical resistivity has a metallic type, increasing monotonically with temperature. A sufficiently large magnetoresistance of 750% is observed. The majority carriers are supposed to be holes with a concentration of ∼ 6.8•10 21 cm -3 and mobility of ∼ 1950 cm 2 /Vs at T = 4.2 K as a result of the Hall effect studies. The optical properties of PtSn 4 have features characteristic of "bad" metals. © 2019 Published under licence by IOP Publishing Ltd.
Keywords: BINARY ALLOYS
ELECTRIC CONDUCTIVITY
HALL MOBILITY
NANOELECTRONICS
NANOSTRUCTURES
OPTICAL DATA PROCESSING
PLATINUM ALLOYS
SINGLE CRYSTALS
TEMPERATURE DISTRIBUTION
TIN ALLOYS
ELECTRICAL AND OPTICAL PROPERTIES
GALVANOMAGNETIC PROPERTIES
MAJORITY CARRIERS
OPTICAL MEASUREMENT
RESIDUAL RESISTIVITY
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
OPTICAL PROPERTIES
URI: http://hdl.handle.net/10995/75506
Access: info:eu-repo/semantics/openAccess
Conference name: 20th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Optoand Nanoelectronics, RYCPS 2018
Conference date: 26 November 2018 through 30 November 2018
SCOPUS ID: 85065613316
PURE ID: 9818252
ISSN: 1742-6588
DOI: 10.1088/1742-6596/1199/1/012037
metadata.dc.description.sponsorship: This work was partly supported by the state assignment of Russia (theme “Spin” No. АААА-А18-18020290104-2 and theme “Electron” No. АААА-А18-118020190098-5), by the RFBR (project No.17-52-52008) and by the Government of the Russian Federation (state contract No. 02.A03.21.0006).
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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