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|Title:||Luminescence of sapphire single crystals irradiated with high-power ion beams|
|Authors:||Ananchenko, D. V.|
Nikiforov, S. V.
Ramazanova, G. R.
Batalov, R. I.
Bayazitov, R. M.
Novikov, H. A.
|Publisher:||Institute of Physics Publishing|
|Citation:||Luminescence of sapphire single crystals irradiated with high-power ion beams / D. V. Ananchenko, S. V. Nikiforov, G. R. Ramazanova et al. // Journal of Physics: Conference Series. — 2018. — Vol. 1115. — Iss. 5. — 52027.|
|Abstract:||Optical absorption, photo- and cathodoluminescence of a sapphire single crystal (α-Al 2 O 3 ) exposed to pulsed nanosecond radiation with high-power ion beams C + /H + with an energy of 300 keV and energy density 0.5-1.5 J/cm 2 were first investigated in this work. It was found that under ion irradiation accompanied by heating of sapphire up to melting, the formation of F-type centers and their aggregates associated with oxygen vacancies was observed in the crystals under study. These centers have luminescence bands at 330, 410 and 500 nm which depend on the type and wavelength of the optical excitation. The appearance of a new PL emission at 435 nm, presumably associated with a complex vacancy-impurity defect, was also observed in the photoluminescence spectra. © Published under licence by IOP Publishing Ltd.|
HIGH POWER ION BEAM
SAPPHIRE SINGLE CRYSTAL
|Conference name:||6th International Congress on Energy Fluxes and Radiation Effects 2018, EFRE 2018|
|Conference date:||16 September 2018 through 22 September 2018|
|metadata.dc.description.sponsorship:||The work was supported by the initiative scientific project № 16.5186.2017/8.9 of the Ministry of Education and Science of the Russian Federation. Experiments on ion irradiation of sapphire was done at the KIPT as a part of the state task.|
|Appears in Collections:||Научные публикации, проиндексированные в SCOPUS и WoS CC|
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|10.1088-1742-6596-1115-5-052027.pdf||1,07 MB||Adobe PDF||View/Open|
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