Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/51588
Title: Interference quantum correction to conductivity of Al xGa 1-xAs/GaAs double quantum well heterostructures near the balance
Authors: Germanenko, A. V.
Minkov, G. M.
Rut, O. E.
Sherstobitov, A. A.
Issue Date: 2012
Citation: Interference quantum correction to conductivity of Al xGa 1-xAs/GaAs double quantum well heterostructures near the balance / A. V. Germanenko, G. M. Minkov, O. E. Rut, A. A. Sherstobitov // Journal of Physics: Conference Series. — 2012. — Vol. 376. — № 1.
Abstract: We present the results of experimental investigations of the interference quantum correction to the conductivity of the gated double quantum well Al xGa 1-xAs/GaAs/Al xGa 1-xAs heterostructures. Analyzing the positive magnetoconductiv-ity we obtain the interwell transition rate and the phase relaxation rate under the conditions when one and two quantum wells are occupied. It has been found that the interwell transition rate resonantly depends on the difference between the electron densities in the wells in accordance with the theoretical estimate. The central point, however, is that the dephasing rate in the lower quantum well is independent of whether the upper quantum well contributes to the conductivity or not. The results obtained are interpreted within framework of the recent theory for the dephasing and electron-electron interaction in the double well structures [Burmistrov I S, Gornyi I V and Tikhonov K S 2011 Phys. Rev. B 84 075338].
URI: http://hdl.handle.net/10995/51588
https://elar.urfu.ru/handle/10995/51588
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 84865005833
WOS ID: 000307718500024
PURE ID: 1077148
ISSN: 1742-6588
DOI: 10.1088/1742-6596/376/1/012024
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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