Generation of powerful microwave voltage oscillation in diffused SI diode

Abstract

Generation of powerful microwave voltage oscillations in a diffused silicon diode has been studied. The reverse current of 2 kA in amplitude passed through 320-μm diode with p-n junction depth of 220 μm, and surface area of 0.5 cm2. At the average voltage about 300 V and microwave voltage pulse duration of 200 ns the voltage swing of the oscillations reaches 480 V. The frequency of the oscillations is 5 to 7 GHz, and power is about 300 kW. In the theoretical analysis it is shown that start of process of oscillations, their swing and frequency are determined by density of a reverse current. © 2012 CriMiCo.