Charge transport mechanism in intercalated Cu (x) HfSe2 compounds

Abstract

Alternating current resistivity measurements have been performed for the first time on intercalated Cu xHfSe 2 (0 ≤ x ≤ 0. 18) samples using the impedance spectroscopy technique together with direct current measurements. The results obtained indicate the hopping mechanism of charge transport in Cu xHfSe 2 compounds. It has been found that an increase in the copper content in samples enhances relaxation processes. The ac conductivity exhibits frequency dispersion described by the universal dynamic response. © 2012 Pleiades Publishing, Ltd.