Power microwave voltage oscillations in semiconductor diode at high current density

Abstract

Numerical methods were used to investigate the operation of the diffusive silicon p+-p-n+ diode. The reversed current density of 50 kA/cm2 passed through the diode having the width of 320 μm, p-n junction depth of 220 μm, and surface area of 0.5 cm2. It is shown that at a current density of 3÷20 kA/cm2, in the structure of the diode there is a mode of undamped voltage oscillations. Outside of this range in the structure the mode of stationary breakdown is established. The most powerful oscillations exist at a current density 15 kA/cm2, with power of oscillations in the diode of 1 MW, frequency 10 GHz and efficiency 30 %. © 2012 CriMiCo.